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Volumn 123-124, Issue , 1998, Pages 718-724

In-situ direct measurement of activation energies for the generation of misfit dislocations in the InGaAs/GaAs (001) system

(16) Lacey, G a Whitehouse, C R a Parbrook, P J a Cullis, A G a Keir, A M b Mock P c,f Johnson, A D b Smith, G W b Clark, G F d Tanner, B K c Martin, T b Lunn, B e Hogg, J H C e Emeny, M T b Murphy, B d Bennett, S d

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b DRA (United Kingdom)

c DURHAM UNIVERSITY (United Kingdom)

d DARESBURY LABORATORY (United Kingdom)

e UNIVERSITY OF HULL (United Kingdom)

f IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY ANALYSIS;

X RAY TOPOGRAPHY;

HETEROJUNCTIONS;

EID: 0031678316 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(97)00477-7 Document Type: Article

Times cited : (17)

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