Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 971-974

  Tangring I ^a   Wang, S M ^a   Sadeghi, M ^a   Larsson, A ^a   Wang, X D ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Metamorphic growth; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

EPILAYERS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

METAMORPHIC GROWTH; OPTICAL QUALITY; RIDGE WAVEGUIDE LASERS; SEMICONDUCTING III-V MATERIALS;

QUANTUM WELL LASERS;

EID: 33947306874     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.171     Document Type: Article

References (14)

1. Huffaker D.L., Park G., Zou Z., Schekin O.B., and Deppe D.G. Appl. Phys. Lett. 73 (1998) 2564
2. Nakahara K., Kondow M., Kitatani T., Larson M.C., and Uomi K. IEEE Photon Technol. Lett. 10 (1998) 487
3. Liu P.W., Liao G.H., and Lin H.H. Electron. Lett. 40 (2004) 177
4. Kuntz M., Fiol G., Lämmlin M., Schubert C., Kovsh A.R., Jacob A., Umbach A., and Bimberg D. Electron. Lett. 41 (2005) 244
5. Wei Y.Q., Gustavsson J.S., Sadeghi M., Wang S., Larsson A., Savolainen P., Melanen P., and Sipilä P. Opt. Express 14 (2006) 2753
6. Otsubo K., Nishijima Y., Uchida T., Shoji H., Nakajima K., and Ishikawa H. Jpn. J. Appl. Phys. 38 (1999) 312
7. Tångring I., Wang S.M., Sadeghi M., Gu Q.F., and Larsson A. J. Crystal Growth 281 (2005) 220
8. Tångring I., Wang S.M., Gu Q.F., Wei Y.Q., Sadeghi M., Zhao Q.X., Akram M.N., Berggren J., and Larsson A. Appl. Phys. Lett. 86 (2005) 171902
9. Xin Y.-C., Vaughn L.G., Dawson L.R., Stintz A., Lin Y., Lester L.F., and Huffaker D.L. J. Appl. Phys. 94 (2003) 2133
10. Ledentsov N.N., et al. Electron. Lett. 39 (2003) 1126
11. Zhukov A.E., et al. Semiconductors 37 (2003) 1119
12. Tångring I., Wang S.M., Sadeghi M., and Larsson A. Electron. Lett. 42 (2006) 33
13. Sizov D.S., et al. Semiconductors 36 (2002) 1020
14. Tersoff J. Appl. Phys. Lett. 62 (1993) 693