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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages 588-594

Damage engineering of boron-based low energy ion implantations on ultrashallow junction fabrications

(3) Qin, Shu a Hu, Y Jeff a McTeer, Allen a

a MICRON TECHNOLOGY INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; BORON COMPOUNDS; ENHANCED RECOVERY; ION IMPLANTATION; PLASMA DEPOSITION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

A-SI LAYERS; CURRENT ANNEALING; DAMAGE BEHAVIOR; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; END-OF-RANGE DAMAGES; IMPLANT ENERGY; ION IMPLANT; ION MASS; LATTICE DAMAGE; LOW ENERGIES; LOW ENERGY ION IMPLANTATION; LOWER ENERGIES; MOLECULAR IONS; PLASMA DOPING; SI WAFER; SURFACE LATTICE; THERMAL BUDGET; ULTRA LOW ENERGY; ULTRA SHALLOW JUNCTION;

ION BOMBARDMENT;

EID: 77952973627 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3431084 Document Type: Conference Paper

Times cited : (6)

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