Plasma immersion ion implantation - A fledgling technique for semiconductor processing

Materials Science and Engineering R: Reports

Volumn 17, Issue 6-7, 1996, Pages 207-280

  Chu, Paul K ^a   Qin, Shu ^b   Chan, Chung ^b   Cheung, Nathan W ^c   Larson, Lawrence A ^d  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b Northeastern University   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d SEMATECH   (United States)

Author keywords

Plasma immersion ion implantation; Semiconductor processing

Indexed keywords

DEPOSITION; MICROELECTRONICS; PLASMA APPLICATIONS; PLASMA SHEATHS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON ON INSULATOR TECHNOLOGY;

PLASMA IMMERSION ION IMPLANTATION (PIII); TRENCH DOPING;

ION IMPLANTATION;

EID: 0030288186     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(96)00194-5     Document Type: Article

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