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Volumn , Issue , 2008, Pages 8-13

Plasma doping on 68nm CMOS device source/drain formations

Author keywords

CMOS device performance; Plasma doping; Plasma immersion ion implantation (PIII); Source and drain formations; Throughput

Indexed keywords

COMPUTER NETWORKS;

EID: 50849096717     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2008.4540007     Document Type: Conference Paper
Times cited : (10)

References (10)
  • 2
    • 0003495113 scopus 로고    scopus 로고
    • Ed, 2000 Ed, Ion Implantation Technology Co, Edgewater, MD
    • J. F. Ziegler (Ed.), Ion Implantation Science and Technology, 2000 Ed., Ion Implantation Technology Co., Edgewater, MD, 2000, p.133.
    • (2000) Ion Implantation Science and Technology , pp. 133
  • 6
    • 45949083496 scopus 로고    scopus 로고
    • Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing
    • accepted
    • S. Qin and A. McTeer, "Faraday/Ion Mass Spectroscopy Dosimeter for Plasma Immersion Ion Implantation/Plasma Doping Processes of Semiconductor Manufacturing", IEEE Trans. on Plasma Science, accepted, 2008.
    • (2008) IEEE Trans. on Plasma Science
    • Qin, S.1    McTeer, A.2
  • 7
    • 50849109585 scopus 로고
    • VLSI Fabrication Principles:, John Wiley & Sons, Inc, New York, NY
    • S. K. Ghandhi, VLSI Fabrication Principles: Silicon and Gallium Arsenide, John Wiley & Sons, Inc., New York, NY, 1994, p.90.
    • (1994) Silicon and Gallium Arsenide , pp. 90
    • Ghandhi, S.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.