메뉴 건너뛰기




Volumn 49, Issue 10, 2006, Pages 45-50

Meeting future SDE requirements using co-implantation and RTA

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION-RETARDING SPECIES; SCANNING SPREADING RESISTANCE MICROSCOPY (SSRM); SOURCE/DRAIN EXTENSIONS; ULTRASHALLOW JUNCTION (USJ);

EID: 33751222213     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (3)

References (7)
  • 2
    • 4544335208 scopus 로고    scopus 로고
    • 2-based high-k dielectrics as a candidate for low-power applications
    • 2-Based High-k Dielectrics as a Candidate for Low-Power Applications," Proc. of Symp. on VLSI Technology, pp. 190-191, 2004.
    • (2004) Proc. of Symp. on VLSI Technology , pp. 190-191
    • Anil, K.G.1
  • 3
    • 33751070591 scopus 로고    scopus 로고
    • Analysis and optimization of new implantation and activation mechanisms in ultra shallow junction implants using Scanning Spreading Resistance Microscopy (SSRM)
    • to be published, Spring
    • P.C. Eyben, S. Severi, R. Duffy, B. Pawlak, W. Vandervorst, "Analysis and Optimization of New Implantation and Activation Mechanisms in Ultra Shallow Junction Implants using Scanning Spreading Resistance Microscopy (SSRM)," to be published in Proc. of MRS Symposium C, Spring 2006.
    • (2006) Proc. of MRS Symposium C
    • Eyben, P.C.1    Severi, S.2    Duffy, R.3    Pawlak, B.4    Vandervorst, W.5
  • 4
    • 33751226334 scopus 로고    scopus 로고
    • Source and drain extension formation using carbon co-implantation for PMOS devices
    • H. Graoui, M. Foad, V. Moroz, "Source and Drain Extension Formation Using Carbon Co-implantation for PMOS Devices," Proc. of Ultra-Shallow Junctions 2005, p. 346, 2005.
    • (2005) Proc. of Ultra-shallow Junctions 2005 , pp. 346
    • Graoui, H.1    Foad, M.2    Moroz, V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.