Formation of S/D-extension using boron gas cluster ion beam doping for sub-50-nm PMOSFET

Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005

Volumn 2005, Issue , 2005, Pages 35-36

  Yamashita, T ^a   Hayashi, T ^a   Nishida, Y ^a   Kawasaki, Y ^a   Kuroi, T ^a   Oda, H ^a   Eimori, T ^a   Ohji, Y ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847278415     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. K. Goto et al., IEDM Tech Dig. (1996) p.435.
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4. J. Hautala et. al, Ext. Abstr. Intl. Workshop on Junction Technology (2004) p. 50.
5. J. Borland et. al, Solid State Technology, p. 53, May 2004.
6. H. Sayama et. al, IEDM Tech Dig. (2000) p.239.
7. T. Ito et al., Ext. Abstr. Solid State Devices and Materials, (2001) p. 182.
8. A. Shima et al., IEDM Tech Dig. (2003) p. 493