SIMS/ARXPS - A new technique of retained dopant dose and profile measurement of ultralow-energy doping processes

IEEE Transactions on Plasma Science

Volumn 37, Issue 1, 2009, Pages 139-145

  Qin, Shu ^a   Zhuang, Kent ^a   Lu, Shifeng ^a   McTeer, Allen ^a   Morinville, Wendy ^a   Noehring, Kari ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

Angle resolved X ray photoelectron spectroscopy (ARXPS); Plasma doping; Plasma immersion ion implantation (PIII); Secondary ion mass spectrometry (SIMS)

Indexed keywords

CLEANING; DOPING (ADDITIVES); ELECTRON SPECTROSCOPY; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; ION BOMBARDMENT; ION IMPLANTATION; IONS; MASS SPECTROMETERS; MASS SPECTROMETRY; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; PLASMA APPLICATIONS; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SECONDARY EMISSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SPECTROMETERS; SPECTROMETRY; SPECTRUM ANALYSIS; SURFACE ANALYSIS; SURFACE CLEANING;

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY (ARXPS); BEAM LINES; DOSE LOSS; ENERGY IMPLANTS; ION MASS SPECTROMETRY; NATIVE OXIDES; PLASMA DOPING; PLASMA IMMERSION ION IMPLANTATION (PIII); PROFILE MEASUREMENTS; SECONDARY ION MASS SPECTROMETRY (SIMS); X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 58549113978     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2008.2006845     Document Type: Article

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