Electrical and structural characterization of boron implanted silicon following laser thermal processing

Materials Research Society Symposium - Proceedings

Volumn 717, Issue , 2002, Pages 45-50

  Gable, K A ^a   Jones, K S ^a   Law, M E ^b   Robertson, L S ^c   Talwar, S ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d Verdant Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; IRRADIATION; LASER APPLICATIONS; MELTING; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SURFACE PHENOMENA; TRANSMISSION ELECTRON MICROSCOPY;

LASER THERMAL PROCESSING (LTP);

SILICON WAFERS;

EID: 0036453143     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-717-c1.10     Document Type: Conference Paper

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