Comparative study of native oxide impacts on low energy doping processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 28, Issue 1, 2010, Pages

  Qin, Shu ^a   McTeer, Allen ^a   Zhuang, Kent ^a   Morinville, Wendy ^a   Lu, Shifeng ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEAMLINE IMPLANTS; COMPARATIVE STUDIES; DOPING PROCESS; IMPURITY PROFILE; INTERFACE SEGREGATION; LOSS MECHANISMS; LOW ENERGIES; LOW ENERGY IMPLANTS; NATIVE OXIDES; P-TYPE; PLASMA IMMERSION ION IMPLANTATION; SECONDARY IONS; SEMICONDUCTOR PROCESS; THERMAL-ANNEALING;

ARSENIC; BORON; BORON COMPOUNDS; IMPURITIES; ION IMPLANTATION; PLASMA APPLICATIONS; SPECTROSCOPIC ANALYSIS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77949370656     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3184522     Document Type: Conference Paper

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