Device performance improvement of PMOS devices fabricated by B2H6 PIII/PLAD processing

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2497-2502

  Qin, Shu ^a   McTeer, Allen ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

Device electrical performance; Dopant profiles; Plasma doping (PLAD); Plasma immersion ion implantation (PIII); Throughput

Indexed keywords

ELECTRIC CURRENTS; FABRICATION; ION IMPLANTATION; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

PLASMA DOPING; PLASMA IMMERSION ION IMPLANTATION;

MOS DEVICES;

EID: 41749102928     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902423     Document Type: Article

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