25% Drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 194-195

  Verheyen, P ^a   Collaert, N ^a   Rooyackers, R ^a   Loo, R ^a   Shamiryan, D ^a   De Keersgieter, A ^b,c   Eneman, G ^a   Leys, F ^b   Dixit, A ^d   Goodwin, M ^d   Yim, Y S ^a   Caymax, M ^b   De Meyer, K ^a   Absil, P ^a   Jurczak, M ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c FUND FOR SCIENTIFIC RESEARCH   (Belgium)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN REGIONS; MULTIPLE GATE FET (MUGFET) DEVICES; PMOS; SI0.8GE0.2;

ELECTRIC CURRENTS; ELECTRIC DRIVES; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; STRESSES;

FIELD EFFECT TRANSISTORS;

EID: 33745134066     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469264     Document Type: Conference Paper

References (5)

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2. T. Ghani et al., IEDM Tech. Dig., 2003, pp. 978-980
3. P.R. Chidambaram et al., Symp. VLSI Tech., 2004, p. 48-49
4. F. Nouri et al., IEDM Tech. Dig., 2004, p.1055-1058
5. H.Irie et al., IEDM Tech. Dig., 2004, pp. 225-228.