HfO2 / HfOx Ny / HfO2 gate dielectric fabricated by in situ oxidation of plasma-enhanced atomic layer deposition HfN middle layer

Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

  Maeng, W J ^a   Gu, Gil Ho ^a   Park, C G ^a   Lee, Kayoung ^b   Lee, Taeyoon ^b   Kim, Hyungjun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS; GATE OXIDE; GATE-LEAKAGE CURRENT; H-BONDS; HIGH DIELECTRIC CONSTANTS; IN-SITU OXIDATION; INTERFACE TRAP DENSITY; LOCALIZED STATE; MIDDLE LAYER; NEAR-EDGE X-RAY ABSORPTION; NITROGEN INCORPORATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POSITIVE CHARGE DENSITY; TETRAKIS; TRAP DENSITY; TRILAYER;

ABSORPTION SPECTROSCOPY; ATOMS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; PLASMA DEPOSITION; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67650578509     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3147254     Document Type: Article

References (24)

1. D. Buchanan, IBM J. Res. Dev. 0018-8646, 43, 245 (1999).
2. K. Xiong, J. Robertson, and S. J. Clark, J. Appl. Phys. 0021-8979, 99, 044105 (2006). 10.1063/1.2173688
3. H. J. Cho, C. S. Kang, K. Onishi, S. Gopalan, R. Nieh, R. Choi, E. Dharmarajan, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2001, 655.
4. K. Sekine, S. Inumiya, M. Sato, A. Kaneko, K. Eguchi, and Y. Tsunashima, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2003, 103.
5. E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. 0018-8646, 50, 387 (2006).
6. X. Yu, C. Zhu, and M. Yu, Appl. Phys. Lett. 0003-6951, 90, 103502 (2007). 10.1063/1.2709948
7. W. J. Maeng and H. Kim, Appl. Phys. Lett. 0003-6951, 91, 092901 (2007). 10.1063/1.2776350
8. E. -C. Lee, Phys. Rev. B 0163-1829, 77, 104108 (2008). 10.1103/PhysRevB.77.104108
9. J. L. Gavartin, A. L. Shluger, A. S. Foster, and G. I. Bersuker, J. Appl. Phys. 0021-8979, 97, 053704 (2005). 10.1063/1.1854210
10. K. B. Chung, C. N. Whang, M. H. Cho, C. J. Yim, and D. H. Ko, Appl. Phys. Lett. 0003-6951, 88, 081903 (2006). 10.1063/1.2175493
11. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, Wiley Interscience, New Jersey (2003).
12. D. -G. Park, H. -J. Cho, K. -Y. Lim, C. Lim, I. -S. Yeo, J. -S. Roh, and J. W. Park, J. Appl. Phys. 0021-8979, 89, 6275 (2001). 10.1063/1.1368869
13. K. Chang Seok, H. J. Cho, K. Onishi, R. Choi, Y. H. Kim, R. Nieh, J. Han, S. Krishnan, A. Shahriar, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 0163-1918, 2002, 865.
14. W. J. Maeng and H. Kim, J. Electrochem. Soc. 0013-4651, 155, H267 (2008). 10.1149/1.2840616
15. A. Arranz, Surf. Sci. 0039-6028, 563, 1 (2004). 10.1016/j.susc.2004.06. 162
16. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data, Perkin-Elmer, Minnesota (1992).
17. O. Renault, N. T. Barrett, D. Samour, and S. Quiais-Marthon, Surf. Sci. 0039-6028, 566, 526 (2004). 10.1016/j.susc.2004.05.105
18. X. J. Wang, L. D. Zhang, M. Liu, J. P. Zhang, and G. He, Appl. Phys. Lett. 0003-6951, 92, 122901 (2008). 10.1063/1.2903097
19. J. Choi, R. Puthenkovilakam, and J. P. Chang, J. Appl. Phys. 0021-8979, 99, 053705 (2006). 10.1063/1.2177385
20. G. Shang, P. W. Peacock, and J. Robertson, Appl. Phys. Lett. 0003-6951, 84, 106 (2004). 10.1063/1.1638896
21. J. G. Chen, Surf. Sci. Rep. 0167-5729, 30, 1 (1997). 10.1016/S0167- 5729(97)00011-3
22. B. Bouchet-Fabre, K. Zellama, C. Godet, D. Ballutaud, and T. Minea, Thin Solid Films 0040-6090, 482, 156 (2005). 10.1016/j.tsf.2004.11.134
23. D. Fischer, A. Curioni, S. Billeter, and W. Andreoni, Phys. Rev. Lett. 0031-9007, 92, 236405 (2004). 10.1103/PhysRevLett.92.236405
24. T. Nabatame, K. Segawa, M. Kadoshima, H. Takaba, K. Iwamoto, S. Kimura, Y. Nunoshige, H. Satake, T. Ohishi, and A. Toriumi, Mater. Sci. Semicond. Process. 1369-8001, 9, 975 (2006). 10.1016/j.mssp.2006.10.013