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Volumn 53, Issue 6, 2008, Pages 3334-3337

Comparison of the deposition characteristics and electrical properties for La2O3, HfO2 and LHO films

Author keywords

Atomic layer deposition; Hafnium oxide (HfO 2); High k oxide; Lanthanum hafnium oxide (LHO); Lanthanum oxide (La2O3); Rare earth oxide

Indexed keywords


EID: 58249102069     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.3334     Document Type: Article
Times cited : (11)

References (13)
  • 11
    • 58249103742 scopus 로고    scopus 로고
    • J. Hauser, The EOT was Calculated Using the NCSU CVC Program (J. Hauser, CVC © 1996 NCSU software, Department Elect. Comput. Eng., North Carolina State University, Raleigh, NC.)
    • J. Hauser, The EOT was Calculated Using the NCSU CVC Program (J. Hauser, CVC © 1996 NCSU software, Department Elect. Comput. Eng., North Carolina State University, Raleigh, NC.)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.