Electrical properties of atomic layer deposition HfO2 and HfOx Ny on Si substrates with various crystal orientations

Journal of the Electrochemical Society

Volumn 155, Issue 4, 2008, Pages

  Maeng, W J ^a   Kim, Hyungjun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GATE DIELECTRICS; LEAKAGE CURRENTS; NITRIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH MOBILITY DEVICES; OXIDE THICKNESS; OXYGEN PLASMA;

CRYSTAL ORIENTATION;

EID: 40549085077     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2840616     Document Type: Article

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