Examination and evaluation of La2O3 as gate dielectric for sub-100 nm CMOS and DRAM technology

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 937-940

  Capodieci, V ^a   Wiest, F ^a   Sulima, T ^a   Schulze, J ^a   Eisele, I ^a  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMODYNAMIC STABILITY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

FULL WIDTH AT HALF MAXIMUM (FWHM); GATE DIELECTRICS; INTERFACE LAYERS; LA2O3;

CMOS INTEGRATED CIRCUITS;

EID: 14644396607     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.021     Document Type: Conference Paper

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