Properties of GaN and AlGaN Schottky contacts revealed from I-V-T and C-V-T measurements

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 192-197

  Sawada, T ^a   Izumi, Y ^a   Kimura, N ^a   Suzuki, K ^a   Imai, K ^a   Kim, S W ^b   Suzuki, T ^b  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaN; C V T; GaN; I V T; Native oxides; Schottky barrier height

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE STRUCTURE;

SCHOTTKY BARRIER HEIGHT (SBH);

SCHOTTKY BARRIER DIODES;

EID: 0038345972     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00440-9     Document Type: Conference Paper

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