DC characteristics of anisotype heterojunction in the presence of interface states and series resistance

Applied Surface Science

Volumn 143, Issue 1, 1999, Pages 287-300

  Chattopadhyay, P ^a   Haldar, D P ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DIODES;

ANISOTYPE HETEROJUNCTION; CONDUCTANCE VOLTAGE CHARACTERISTICS; SERIES RESISTANCE;

HETEROJUNCTIONS;

EID: 0032677221     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00907-6     Document Type: Article

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