AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 2982-2984

  Tang, Jian ^a   Wang, Xiaoliang ^a,b   Xiao, Hongling ^a   Ran, Junxue ^a   Wang, Cuimei ^a   Wang, Xiaoyan ^a   Hu, Guoxin ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALGAN/GAN; ALN; DH-HEMTS; DOUBLE HETEROJUNCTIONS; GAN BUFFER; HALL MEASUREMENTS; LOW-DISLOCATION DENSITY; MOCVD; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; SCAN AREA; SHEET CARRIER DENSITIES; TEMPERATURE DEPENDENT; TWO-DIMENSIONAL ELECTRON GAS (2DEG); ULTRA-THIN;

CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HETEROJUNCTIONS; PHASE INTERFACES; PHOTORESISTS; SINGLE CRYSTALS; SURFACE STRUCTURE; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77951032143     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200779165     Document Type: Conference Paper

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