Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

Applied Physics Letters

Volumn 91, Issue 26, 2007, Pages

  Xie, J ^a   Leach, J H ^a   Ni, X ^a   Wu, M ^a   Shimada, R ^a   Ozgur U ^a   Morko H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; HALL MOBILITY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CHANNEL LAYERS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); INDIUM GALLIUM NITRIDE;

FIELD EFFECT TRANSISTORS;

EID: 37549039044     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2824461     Document Type: Article

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