The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 24, Issue 3-4, 2004, Pages 249-256

  Gokden S ^a   Baran, R ^a   Balkan, N ^b   Mazzucato, S ^b  

^a BALIKESIR UNIVERSITY   (Turkey)

^b UNIVERSITY OF ESSEX   (United Kingdom)

Author keywords

GaN; III V compounds; Interface roughness scattering

Indexed keywords

ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); IONIZATION; PHONONS; PIEZOELECTRIC DEVICES;

III-V COMPOUNDS; IMPURITY SCATTERING; INTERFACE ROUGHNESS SCATTERING; PHONON SCATTERING;

ALUMINUM COMPOUNDS;

EID: 4544361300     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.04.042     Document Type: Article

References (27)

1. M. Razeghi, A. Rogalski, J. Appl. Phys. 79 (1996) 1996.
2. H. Morkoc, Nitride Semiconductors and Devices, Springer, Heidelberg, 1999.
3. I. Akasaki, H. Amano, Jpn. J. Appl. Phys. 36 (1997) 5293.
4. F. Stern, Phys. Rev. Lett. 44 (1980) 1469.
5. A.J. Sirekowski, L.E. Eastman, J. Appl. Phys. 86 (1999) 3398.
6. R.P. Joshi, Appl. Phys. Lett. 64 (1994) 223.
7. S. Mazzucato, M.C. Arikan, N. Balkan, B.K. Ridley, N. Zakhleniuk, R.J. Shealy, B. Schaff, Physica B 314 (2002) 55.
8. B.K. Ridley, Appl. Phys. Lett. 77 (2000) 990.
9. B.K. Ridley, B.E. Foutrz, L.F. Eastman, Physical Review B 61 (1999) 16862.
10. F.F. Fang, W.E. Howard, Phys. Rev. Lett. 16 (1966) 797.
11. A.R. Hutsbn, J. Appl. Phys. 32 (1961) 2287.
12. P. Tripathi, B.K. Ridley, Phys. Rev. B 66 (2002) 195301.
13. K. Lee, M.S. Shur, T.J. Drummond, H. Morkoc, J. Appl. Phys. 54 (11) (1983) 6432.
14. T.J. Ando, Phys. Soc. Japan 51 (1982) 1982.
15. B.K. Ridley, B.E. Foutz, F. Eastman, Phys. Rev. B 61 (2000) 16862.
16. B. Deveaud, J.Y. Emergy, A. Chomette, B. Lambert, M. Baudet, Superlattices Microstruct. 3 (1985) 205.
17. K. Hirakawa, H. Sakaki, Phys. Rev. B 33 (1986) 8291.
18. F. Stern, Phys. Rev. B 5 (1972) 4891.
19. H. Mathieu, Physique des Semiconduteurs et des composants electroniques, Masoon, Paris, 1997.
20. K. Hess, Appl. Phys. Lett. 35 (1979) 484.
21. C.T. Sah, T.H. Ning, L.L. Tschopp, Surf. Sci. 32 (1972) 561.
22. S. Hiyamizu, T. Fuji Mimura, K. Nanbu, J. Saito, H. Hashimoto, Jpn. J. Appl. Phys. 20 (1981) L455.
23. A. Madhukar, Surf. Sci. 132 (1983) 344.
24. R. Heckingbottom, G.J. Davies, K.A. Prior, Surf. Sci. B 2 (1983) 375.
25. G. Margaritondo, Surf. Sci. 132 (1983) 469.
26. T. Li, R.P. Joshi, C. Fazi, J. Appl. Phys. (2000) 88829.
27. R. Gupta, B.K. Ridley, Phys. Rev. B 48 (1993) 11972.