Ion energy dependence of interface parameters of ion beam sputter deposited W/Si interfaces

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 10, 2010, Pages 1594-1600

  Biswas, A ^a   Bhattacharyya, D ^a  

^a BHABHA ATOMIC RESEARCH CENTRE   (India)

Author keywords

Grazing incidence X ray reflectivity (GIXR); Ion beam sputtering (IBS)

Indexed keywords

DETECTOR SCAN; GRAZING INCIDENCE X-RAY REFLECTIVITIES; GRID CURRENT; INTERFACE DIFFUSION; INTERFACE PARAMETERS; INTERFACE ROUGHNESS; ION BEAM SPUTTER DEPOSITED; ION ENERGIES; ION-BEAM SPUTTERING; SI SUBSTRATES; SIMULATED SPECTRA; WORKING PRESSURES;

BEAM PLASMA INTERACTIONS; ION BEAMS; ION BOMBARDMENT; REFLECTION; SILICON; SPUTTERING; X RAY DIFFRACTION;

IONS;

EID: 77951022700     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.02.010     Document Type: Article

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