Ion-induced interface layer formation in W/Si and WRe/Si multilayers

Surface Science

Volumn 582, Issue 1-3, 2005, Pages 227-234

  Kessels, M J H ^a,b   Verhoeven, J ^b   Tichelaar, F D ^c   Bijkerk, F ^a  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b FOM INSTITUTE AMOLF   (Netherlands)

^c National Center for HREM   (Netherlands)

Author keywords

Electron microscopy; Evaporation; Interfaces; Ion bombardment; Multilayers; Reflectometry; Silicon; Thin films; Tungsten

Indexed keywords

EVAPORATION; INTERFACES (MATERIALS); ION BOMBARDMENT; REFLECTOMETERS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY ANALYSIS;

ION ENERGY; MULTILAYER MIRRORS; REFLECTOMETRY; X-RAY REFLECTIVITY;

MULTILAYERS;

EID: 17944371350     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.03.019     Document Type: Article

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