Ion beam induced intermixing of interface structures in W/Si multilayers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 222, Issue 3-4, 2004, Pages 484-490

  Kessels, M J H ^a,b   Verhoeven, J ^b   Yakshin, A E ^a   Tichelaar, F D ^c   Bijkerk, F ^a  

^a FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN   (Netherlands)

^b FOM INSTITUTE AMOLF   (Netherlands)

^c National Center for HREM   (Netherlands)

Author keywords

Electron microscopy; Evaporation; Interfaces; Ion bombardment; Multilayers; Reflectometry; Silicon; Thin films; Tungsten

Indexed keywords

ELECTRON MICROSCOPY; EVAPORATION; FLUORESCENCE; INTERFACES (MATERIALS); ION BOMBARDMENT; MULTILAYERS; REFLECTOMETERS; REFRACTIVE INDEX; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; X RAY ANALYSIS;

ENERGETIC IONS; INTERFACE LAYERS; X-RAY FLUORESCENCE ANALYSIS;

ION BEAMS;

EID: 3142698421     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.03.006     Document Type: Article

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