Stress characteristics in EUV mask Mo/Si multilayers deposited by ion beam sputtering

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 241-250

  Teyssier, C ^a   Quesnel, E ^a   Muffato, V ^a   Schiavone, P ^b  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

Author keywords

EUV; Ion beam sputtering; Molybdenum; Multilayer; Silicon; Stress

Indexed keywords

COMPRESSIVE STRESS; INTERFACES (MATERIALS); ION BEAMS; MASKS; MOLYBDENUM; MULTILAYERS; SEMICONDUCTING SILICON; SHRINKAGE; SPUTTER DEPOSITION; TENSILE STRESS; ULTRAVIOLET RADIATION;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); ION BEAM SPUTTERING (IBS);

LITHOGRAPHY;

EID: 17144464174     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00506-3     Document Type: Conference Paper

References (11)

1. Stress relaxation in Mo/Si multilayer structures
2. Structural and residual stress changes in Mo/a-Si multilayer thin films with annealing
3. Stress, reflectance, and temporal stability of sputter-deposited Mo/Si and Mo/Be multilayer films for EUV lithography
4. Achievement of low stress in Mo/Si multilayer mirrors
5. Stress evolution in Mo/Si multilayers for high-reflectivity extreme ultraviolet mirrors
6. The tension of metallic films deposited by electrolysis
7. The influence of bias sputter parameters on thick copper coatings deposited using a hollow cathode
8. Note on the origin of intrinsic stresses in films deposited via evaporation and sputtering
9. Thermally induced structural modification of Mo-Si multilayers
10. Fabrication of high-reflectance Mo/Si multilayer mirrors by planar magnetron sputtering