SCOPUS 정보 검색 플랫폼

Volumn 107, Issue 6, 2010, Pages

Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors

(2) Sadi, Toufik a Kelsall, Robert W b

a ILMENAU UNIVERSITY OF TECHNOLOGY (Germany)

b UNIVERSITY OF LEEDS (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDES; ELECTROTHERMAL PHENOMENA; HEAT DIFFUSION EQUATIONS; METAL-OXIDE; MONTE CARLO SIMULATORS; MONTE CARLO STUDY; MOSFETS; SELF-HEATING; SELF-HEATING EFFECT; SILICON GERMANIUM ON INSULATORS; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SOI STRUCTURE; STRAINED-SILICON; THERMAL MANAGEMENT; THERMAL PERFORMANCE; ULTRA-THIN;

BICMOS TECHNOLOGY; ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; GERMANIUM; GERMANIUM OXIDES; HEATING; MESFET DEVICES; MICROSENSORS; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950573362 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3345684 Document Type: Conference Paper

Times cited : (22)

References (34)

1
- 0002758190
- 0096-8250. 10.1103/PhysRev.125.44
- B. Abeles, D. S. Beers, G. D. Cody, and J. P. Dismukes, Phys. Rev. 0096-8250 125, 44 (1962). 10.1103/PhysRev.125.44
- (1962) Phys. Rev. , vol.125 , pp. 44
- Abeles, B.¹ Beers, D.S.² Cody, G.D.³ Dismukes, J.P.⁴

2
- 23344438539
- 0163-1918.
- K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2003, 3.1.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 311
- Rim, K.¹ Chan, K.² Shi, L.³ Boyd, D.⁴ Ott, J.⁵ Klymko, N.⁶ Cardone, F.⁷ Tai, L.⁸ Koester, S.⁹ Cobb, M.¹⁰ Canaperi, D.¹¹ To, B.¹² Duch, E.¹³ Babich, I.¹⁴ Carruthers, R.¹⁵ Saunders, P.¹⁶ Walker, G.¹⁷ Zhang, Y.¹⁸ Steen, M.¹⁹ Ieong, M.²⁰ more..

3
- 33750845306
- A. Yangthaisong and T. Osotchan, Proceedings of the IEEE International Conference on Emerging Technologies-Nanoelectronics'06, 2006, p. 438.
- (2006) Proceedings of the IEEE International Conference on Emerging Technologies-Nanoelectronics'06 , pp. 438
- Yangthaisong, A.¹ Osotchan, T.²

4
- 27844598730
- Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)
- DOI 10.1016/j.mseb.2005.08.062, PII S0921510705005404
- K. Usuda, T. Numataa, T. Irisawa, N. Hirashita, and S. Takagi, Mater. Sci. Eng., B 0921-5107 124-125, 143 (2005). 10.1016/j.mseb.2005.08.062 (Pubitemid 41661007)
- (2005) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.124-125 , Issue.SUPPL. , pp. 143-147
- Usuda, K.¹ Numata, T.² Irisawa, T.³ Hirashita, N.⁴ Takagi, S.⁵

5
- 1942452279
- 0268-1242. 10.1088/0268-1242/19/4/068
- R. Rengel, D. Pardo, and M. J. Martín-Martínez, Semicond. Sci. Technol. 0268-1242 19, S199 (2004). 10.1088/0268-1242/19/4/068
- (2004) Semicond. Sci. Technol. , vol.19 , pp. 199
- Rengel, R.¹ Pardo, D.² Martín-Martínez, M.J.³

6
- 0442327512
- 0038-1101. 10.1016/j.sse.2003.09.029
- G. Curatola, G. Fiori, and G. Iannaccone, Solid-State Electron. 0038-1101 48, 581 (2004). 10.1016/j.sse.2003.09.029
- (2004) Solid-State Electron. , vol.48 , pp. 581
- Curatola, G.¹ Fiori, G.² Iannaccone, G.³

7
- 3142723578
- Monte Carlo simulation of nanoscale SOI MOSFETs
- DOI 10.1023/B:RUMI.0000033824.00127.7b
- A. A. Sidorov, V. V. V'yurkov, and A. A. Orlikovsky, Russ. Microelectron. 33, 195 (2004). 10.1023/B:RUMI.0000033824.00127.7b 1063-7397 (Pubitemid 38911798)
- (2004) Russian Microelectronics , vol.33 , Issue.4 , pp. 195-205
- Sidorov, A.A.¹ V'yurkov, V.V.² Orlikovsky, A.A.³

8
- 3543127844
- Computer simulation of a nanoscale ballistic SOI MOSFET with a sub-10-nm Si layer
- DOI 10.1023/A:1024523531727
- V. V. V'yurkov, A. A. Orlikovsky, and A. A. Sidorov, Russ. Microelectron. 32, 224 (2003). 10.1023/A:1024523531727 1063-7397 (Pubitemid 39019216)
- (2003) Russian Microelectronics , vol.32 , Issue.4 , pp. 224-232
- V'yurkov, V.V.¹ Orlikovsky, A.A.² Sidorov, A.A.³

9
- 0012505558
- 10.1023/A:1020729625444
- H. Takeda, N. Mori, and C. Hamaguchi, J. Comput. Elec. 1, 219 (2002). 10.1023/A:1020729625444
- (2002) J. Comput. Elec. , vol.1 , pp. 219
- Takeda, H.¹ Mori, N.² Hamaguchi, C.³

10
- 0032072525
- 0018-9383. 10.1109/16.669557
- F. Gámiz, J. A. López-Villanueva, J. B. Roldán, J. E. Carceller, and P. Cartujo, IEEE Trans. Electron Devices 0018-9383 45, 1122 (1998). 10.1109/16.669557
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1122
- Gámiz, F.¹ López-Villanueva, J.A.² Roldán, J.B.³ Carceller, J.E.⁴ Cartujo, P.⁵

11
- 0029403828
- 0741-3106. 10.1109/55.468289
- J. -H. Choi, Y. -J. Park, and H. -S. Min, IEEE Electron Device Lett. 0741-3106 16, 527 (1995). 10.1109/55.468289
- (1995) IEEE Electron Device Lett. , vol.16 , pp. 527
- Choi, J.-H.¹ Park, Y.-J.² Min, H.-S.³

12
- 0028416842
- 0741-3106. 10.1109/55.285411
- J. Wang, N. Kistler, J. Woo, and C. R. Viswanathan, IEEE Electron Device Lett. 0741-3106 15, 117 (1994). 10.1109/55.285411
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 117
- Wang, J.¹ Kistler, N.² Woo, J.³ Viswanathan, C.R.⁴

13
- 0024627953
- 0018-9383. 10.1109/16.19963
- S. Veeraraghavan and J. G. Fossum, IEEE Trans. Electron Devices 0018-9383 36, 522 (1989). 10.1109/16.19963
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 522
- Veeraraghavan, S.¹ Fossum, J.G.²

14
- 1942455774
- 0741-3106. 10.1109/LED.2004.825192
- S. Polonsky and K. A. Jenkins, IEEE Electron Device Lett. 0741-3106 25, 208 (2004). 10.1109/LED.2004.825192
- (2004) IEEE Electron Device Lett. , vol.25 , pp. 208
- Polonsky, S.¹ Jenkins, K.A.²

15
- 0142217023
- K. A. Jenkins and R. L. Franch, Proceedings of the IEEE International SOI Conference'03, 2003, p. 161.
- (2003) Proceedings of the IEEE International SOI Conference'03 , pp. 161
- Jenkins, K.A.¹ Franch, R.L.²

16
- 0037005422
- 0741-3106. 10.1109/LED.2002.805755
- C. C. Liu, J. Zhang, A. K. Datta, and S. Tiwari, IEEE Electron Device Lett. 0741-3106 23, 716 (2002). 10.1109/LED.2002.805755
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 716
- Liu, C.C.¹ Zhang, J.² Datta, A.K.³ Tiwari, S.⁴

17
- 84944378006
- 0018-9383. 10.1109/16.259622
- L. T. Su, J. E. Chung, D. A. Antoniadis, K. E. Goodson, and M. I. Flik, IEEE Trans. Electron Devices 0018-9383 41, 69 (1994). 10.1109/16.259622
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 69
- Su, L.T.¹ Chung, J.E.² Antoniadis, D.A.³ Goodson, K.E.⁴ Flik, M.I.⁵

18
- 0003783816
- (Kluwer Academic, Boston, MA).
- J. P. Colinge, Silicon-On-Insulator Technology (Kluwer Academic, Boston, MA, 1997).
- (1997) Silicon-On-Insulator Technology
- Colinge, J.P.¹

19
- 0024629437
- 0018-9383. 10.1109/16.19959
- M. Yoshimi, H. Hazama, M. Takahashi, S. K. T. Wada, K. Kato, and H. Tango, IEEE Trans. Electron Devices 0018-9383 36, 493 (1989). 10.1109/16.19959
- (1989) IEEE Trans. Electron Devices , vol.36 , pp. 493
- Yoshimi, M.¹ Hazama, H.² Takahashi, M.³ Wada, S.K.T.⁴ Kato, K.⁵ Tango, H.⁶

20
- 33646505668
- Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum boltzmann equation
- DOI 10.1109/TED.2005.856806
- G. Du, X. Liu, Z. Xia, J. Kang, Y. Wang, R. Han, H. Yu, and D. -L. Kwong, IEEE Trans. Electron Devices 0018-9383 52, 2258 (2005). 10.1109/TED.2005.856806 (Pubitemid 46446466)
- (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.10 , pp. 2258-2263
- Du, G.¹ Liu, X.² Xia, Z.³ Kang, J.⁴ Wang, Y.⁵ Han, R.⁶ Yu, H.⁷ Kwong, D.-L.⁸

21
- 36149005932
- 0096-8250. 10.1103/PhysRev.134.A1058
- C. J. Glassbrenner and G. A. Slack, Phys. Rev. 0096-8250 134, A1058 (1964). 10.1103/PhysRev.134.A1058
- (1964) Phys. Rev. , vol.134 , pp. 1058
- Glassbrenner, C.J.¹ Slack, G.A.²

22
- 33746624336
- Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method
- DOI 10.1109/TED.2006.877698
- T. Sadi, R. Kelsall, and N. Pilgrim, IEEE Trans. Electron Devices 0018-9383 53, 1768 (2006). 10.1109/TED.2006.877698 (Pubitemid 44145080)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.8 , pp. 1768-1774
- Sadi, T.¹ Kelsall, R.² Pilgrim, N.³

23
- 33847658089
- Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method
- DOI 10.1109/TED.2006.885099
- T. Sadi, R. W. Kelsall, and N. J. Pilgrim, IEEE Trans. Electron Devices 0018-9383 53, 2892 (2006). 10.1109/TED.2006.885099 (Pubitemid 46417098)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.12 , pp. 2892-2900
- Sadi, T.¹ Kelsall, R.W.² Pilgrim, N.J.³

24
- 41949095446
- Theoretical study of electron confinement in submicrometer GaN HFETs using a thermally self-consistent Monte Carlo method
- DOI 10.1109/TED.2008.916677
- T. Sadi and R. W. Kelsall, IEEE Trans. Electron Devices 0018-9383 55, 945 (2008). 10.1109/TED.2008.916677 (Pubitemid 351512955)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.4 , pp. 945-953
- Sadi, T.¹ Kelsall, R.W.²

25
- 33847673516
- Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs
- DOI 10.1109/TED.2006.888628
- T. Sadi, R. W. Kelsall, and N. J. Pilgrim, IEEE Trans. Electron Devices 0018-9383 54, 332 (2007). 10.1109/TED.2006.888628 (Pubitemid 46358420)
- (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.2 , pp. 332-339
- Sadi, T.¹ Kelsall, R.W.² Pilgrim, N.J.³

26
- 0000853776
- 0021-8979. 10.1063/1.365696
- P. Dollfus, J. Appl. Phys. 0021-8979 82, 3911 (1997). 10.1063/1.365696
- (1997) J. Appl. Phys. , vol.82 , pp. 3911
- Dollfus, P.¹

27
- 0028515347
- 0018-9383. 10.1109/16.310101
- T. Yamada, J. -R. Zhou, H. Miyata, and D. K. Ferry, IEEE Trans. Electron Devices 0018-9383 41, 1513 (1994). 10.1109/16.310101
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1513
- Yamada, T.¹ Zhou, J.-R.² Miyata, H.³ Ferry, D.K.⁴

28
- 41949120523
- 0741-3106. 10.1109/LED.2007.903920
- T. Sadi and R. W. Kelsall, IEEE Electron Device Lett. 0741-3106 28, 787 (2007). 10.1109/LED.2007.903920
- (2007) IEEE Electron Device Lett. , vol.28 , pp. 787
- Sadi, T.¹ Kelsall, R.W.²

29
- 0003737751
- edited by K. Hess (Kluwer Academic, Norwell, MA).
- Monte Carlo Device Simulation: Full Band and Beyond, edited by, K. Hess, (Kluwer Academic, Norwell, MA, 1991).
- (1991) Monte Carlo Device Simulation: Full Band and beyond

30
- 0003987966
- (Taylor & Francis, New York).
- D. K. Ferry, Semiconductor Transport (Taylor & Francis, New York, 2000).
- (2000) Semiconductor Transport
- Ferry, D.K.¹

31
- 0024070809
- 0741-3106. 10.1109/55.6947
- S. E. Laux and M. V. Fischetti, IEEE Electron Device Lett. 0741-3106 9, 467 (1988). 10.1109/55.6947
- (1988) IEEE Electron Device Lett. , vol.9 , pp. 467
- Laux, S.E.¹ Fischetti, M.V.²

32
- 0036456289
- M. Asheghi, B. Behkam, K. Yazdani, R. Joshi, and K. E. Goodson, Proceedings of the IEEE International SOI Conference'02, 2002, p. 51.
- (2002) Proceedings of the IEEE International SOI Conference'02 , pp. 51
- Asheghi, M.¹ Behkam, B.² Yazdani, K.³ Joshi, R.⁴ Goodson, K.E.⁵

33
- 33947325674
- Thermal conductivity modeling of compacted nanowire composites
- DOI 10.1063/1.2653777
- W. Tian and R. Yang, J. Appl. Phys. 0021-8979 101, 054320 (2007). 10.1063/1.2653777 (Pubitemid 46440027)
- (2007) Journal of Applied Physics , vol.101 , Issue.5 , pp. 054320
- Tian, W.¹ Yang, R.²

34
- 0003426859
- edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York).
- Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by, M. E. Levinshtein, S. L. Rumyantsev, and, M. S. Shur, (Wiley, New York, 2001).
- (2001) Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.