Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 332-339

  Sadi, Toufik ^a   Kelsall, Robert W ^a   Pilgrim, Neil J ^b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b UNIVERSITY OF ABERDEEN   (United Kingdom)

Author keywords

Device simulations; Electrothermal; Monte Carlo (MC); Self heating; Si SiGe modulation doped field effect transistors (MODFETs)

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MICROMETERS; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS;

DEVICE SIMULATIONS; MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFETS); SELF-HEATING;

THIN FILM DEVICES;

EID: 33847673516     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888628     Document Type: Article

References (28)

1. H. C. Yuan, N. Jiang, E. T. Croke, and Z. Ma, "Si-based multi-finger N-MODFET RF power devices," in Proc. Top. Meeting Silicon Monolithic Integr. Circuits RF Syst. SiRF, Jan. 2006, pp. 62-65.
2. T. Hackbarth, H. J. Herzog, K. H. Hieber, U. König, M. Bollani, D. Chrastina, and H. von Kanel, "Reduced self-heating in Si/SiGe field-effect transistors on thin virtual substrates prepared by low-energy plasma-enhanced chemical vapor deposition," Appl. Phys. Lett., vol. 83, no. 26, pp. 5464-5466, Dec. 2003.
3. U. König, M. Zeuner, G. Höck, T. Hackbarth, M. Glück, T. Ostermann, and M. Saxarra, "N- and p- type SiGe HFETs and circuits," Solid State Electron., vol. 43, no. 8, pp. 1383-1388, Aug. 1999.
4. U. König, M. Glück, and G. Höck, "Si/SiGe field-effect transistors," J. Vac. Sci. Technol. B, Microelectron. Process. Phenom., vol. 16, no. 5, pp. 2609-2614, Sep. 1998.
5. K. Ismail, M. Arafa, F. Stern, J. O. Chu, and B. S. Meyerson, "Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures," Appl. Phys. Lett., vol. 66, no. 7, pp. 842-844, Feb. 1995.
6. S. F. Nelson, K. Ismail, J. O. Chu, and B. S. Meyerson, "Room-temperature electron mobility in strained-Si/SiGe heterostructure," Appl. Phys. Lett., vol. 63, no. 3, pp. 367-369, Jul. 1993.
7. K. Ismail, B. S. Meyerson, S. Rishton, J. Chu, S. Nelson, and J. Nocera, "High-transconductance n-type Si/SiGe modulation-doped field-effect transistors," IEEE Electron Device Lett., vol. 13, no. 5, pp. 229-231, May 1992.
8. x. heterostructures," Phys. Rev. B, Condens. Matter, vol. 46, no. 7, pp. 4344-4347, Aug. 1992.
9. x structures grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 59, no. 13, pp. 1611-1613, Sep. 1991.
10. 1-x superlattices," Phys. Rev. Lett., vol. 54, no. 22, pp. 2441-2444, Jun. 1985.
11. F. Monsef, P. Dollfus, and S. Galdin-Retailleau, "Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation," J. Appl. Phys., vol. 95, no. 7, pp. 3587-3593, Apr. 2004.
12. L. Yang, A. Asenov, M. Borici, J. R. Watling, J. R. Barker, S. Roy, K. Elgaid, I. Thayne, and T. Hackbarth, "Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications," in Proc. IEEE Int. Conf. EDSSC, Dec. 2003, pp. 331-334.
13. L. Yang, J. R. Watling, R. C. W. Wilkins, A. Asenov, J. R. Barker, S. Roy, and T. Hackbarth, "Scaling study of Si/SiGe MODFETs for RF applications," in Proc. IEEE 10th Int. Symp. EDMO, Nov. 2002, pp. 101-106.
14. G. C. Crow, R. A. Abram, and A. Yangthaisong, "Monte Carlo simulations of SiGe n-MODFETs with high tensile strained-Si channels," Semicond. Sci. Technol., vol. 15, no. 7, pp. 770-775, Jul. 2000.
15. x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation," J. Appl. Phys., vol. 82, no. 8, pp. 3911-3916, Oct. 1997.
16. S. Roy, A. Asenov, S. Babiker, J. R. Barker, and S. P. Beaumont, "RF performance of strained-Si MODFETs and MOSFETs on virtual SiGe substrates: A Monte Carlo study," in Proc. 27th ESSDERC, Sep. 1997, pp. 192-195.
17. x structure and its FET performance by computer simulation," IEEE Trans. Electron Devices, vol. 41, no. 9, pp. 1513-1522, Sep. 1994.
18. T. Sadi, R. Kelsall, and N. Pilgrim, "Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1768-1774, Aug. 2006.
19. T. Sadi, R. W. Kelsall, and N. J. Pilgrim, "Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 2892-2900, Dec. 2006.
20. F. Schäffler, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, and SiGe, M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Eds. Hoboken, NJ: Wiley, 2001.
21. B. Abeles, D. S. Beers, G. D. Cody, and J. P. Dismukes, "Thermal conductivity of Ge-Si alloys at high temperatures," Phys. Rev., vol. 125, no. 1, pp. 44-46, Jan. 1962.
22. K. A. Jenkins and K. Rim, "Measurement of the effect of self-heating in strained-silicon MOSFETs," IEEE Electron Device Lett., vol. 23, no. 6, pp. 360-362, Jun. 2002.
23. F. P. Incropera and D. P. DeWitt, Fundamentals of Heat and Mass Transfer, 4th ed. Hoboken, NJ: Wiley, 1996.
24. W. Batty, C. E. Christoffersen, A. J. Panks, S. David, C. M. Snowden, and M. B. Steer, "Electrothermal CAD of power devices and circuits with fully physical time-dependent compact thermal modeling of complex nonlinear 3-D systems," IEEE Trans. Compon. Packag. Technol., vol. 24, no. 4, pp. 566-590, Dec. 2001.
25. C. Jacoboni and P, Lugli, The Monte Carlo Method for Semiconductor Device Simulation. New York: Springler-Verlag, 1989.
26. M. Asche and O. G. Sarbei, "Electron-phonon interaction in n-Si," Phys. Status Solidi, B, vol. 103, no. 1, pp. 11-50, Jan. 1981.
27. N. J. Pilgrim, W. Batty, and R. W. Kelsall, "Electrothermal Monte Carlo simulations of InGaAs/AlGaAs HEMTs," J. Comput. Electron., vol. 2, no. 2-4, pp. 207-211, Dec. 2003.
28. S. M. Sze, Physics of Semiconductor Devices. Hoboken, NJ: Wiley, 1969.