Monte Carlo simulation of nanoscale SOI MOSFETs

Russian Microelectronics

Volumn 33, Issue 4, 2004, Pages 195-205

  Sidorov, A A ^a   V'yurkov, V V ^a   Orlikovsky, A A ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC INSULATORS; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON;

DRIFT-DIFFUSION MODEL; ELECTRON DRIFT VELOCITY; QUANTIZATION;

MOSFET DEVICES;

EID: 3142723578     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:RUMI.0000033824.00127.7b     Document Type: Review

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