Hot-phonon effect on the electrothermal behavior of submicrometer III-V HEMTs

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 787-789

  Sadi, Toufik ^a   Kelsall, Robert W ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Electrothermal; High electron mobility transistors (HEMTs); Hot phonons; III As; III N; Monte Carlo (MC)

Indexed keywords

ELECTROTHERMAL; HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS); HOT PHONONS; III-AS; III-N; MONTE CARLO (MC);

ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING GALLIUM; THERMAL EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41949120523     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.903920     Document Type: Article

References (17)

1. P. Lugli, C. Jacoboni, L. Reggiani, and P. Kocevar, "Monte Carlo algorithm for hot phonons in polar semiconductors," Appl. Phys. Lett., vol. 50, no. 18, pp. 1251-1253, May 1987.
2. R. Mickevičius and A. Reklaitis, "Hot phonon effects on electron highfield transport in GaAs," J. Phys., Condens. Matter, vol. 1, no. 47, pp. 9401-9412, Nov. 1989.
3. G. Paulavičius, V. V. Mitin, and N. A. Bannov, "Coupled electron and nonequilibrium optical phonon transport in a GaAs quantum well," J. Appl. Phys., vol. 82, no. 11, pp. 5580-5588, Dec. 1997.
4. K. Kim, K. Hess, and F. Capasso, "Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers," Appl. Phys. Lett., vol. 52, no. 14, pp. 1167-1169, Apr. 1988.
5. R. Mickevičius, V. Mitin, G. Paulavičius, V. Kochelap, M. A. Stroscio, and G. J. Iafrate, "Hot-phonon effects on electron transport in quantum wires," J. Appl. Phys., vol. 80, no. 9, pp. 5145-5149, Nov. 1996.
6. G. Paulavičius, R. Mickevičius, V. Mitin, and M. A. Stroscio, "Hotphonon effects on electron runaway from GaAs quantum wires," J. Appl. Phys., vol. 82, no. 7, pp. 3392-3395, Oct. 1997.
7. M. Ramonas, A. Matulionis, and L. Rota, "Monte Carlo simulation of hot-phonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel," Semicond. Sci. Technol., vol. 18, no. 2, pp. 118-123, Feb. 2003.
8. A. Matulionis, J. Liberis, L. Ardaravičius, L. F. Eastman, J. R. Shealy, and A. Vertiatchikh, "Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature," Semicond. Sci. Technol., vol. 19, no. 4, pp. S421-S423, Apr. 2004.
9. 1-xN/AlN/GaN channel," Phys. Rev. B, Condens. Matter, vol. 71, no. 7, p. 075 324, Feb. 2005.
10. S. Yamakawa, J. Branlard, M. Saraniti, and S. M. Goodnick, "High field transport in GaN and AlGaN/GaN heterojunction field effect transistors," Springer Proc. Phys., vol. 110, pp. 133-138, 2006.
11. T. Sadi, R. Kelsall, and N. Pilgrim, "Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1768-1774, Aug. 2006.
12. T. Sadi, R. W. Kelsall, and N. J. Pilgrim, "Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 2892-2900, Dec. 2006.
13. T. Sadi, R. W. Kelsall, and N. J. Pilgrim, "Electrothermal Monte Carlo simulation of submicrometer Si/SiGe MODFETs," IEEE Trans. Electron Devices, vol. 54, no. 2, pp. 332-339, Feb. 2007.
14. B. K. Ridley, "The LO phonon lifetime in GaN," J. Phys., Condens. Matter, vol. 8, no. 37, pp. L511-L513, 1996.
15. Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W. J. Schaff, and L. F. Eastman, "Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures," Phys. Rev. Lett., vol. 94, no. 3, p. 037 403, Jan. 2005.
16. K. T. Tsen, J. G. Kiang, D. K. Ferry, and H. Morkoç, "Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density," Appl. Phys. Lett., vol. 89, no. 11, p. 112 111, Sep. 2006.
17. F. Vallée, "Time-resolved investigation of coherent LO-phonon relaxation in III-V semiconductors," Phys. Rev. B, Condens. Matter vol. 49, no. 4, pp. 2460-2468, Jan. 1994.