Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs

Journal of Computational Electronics

Volumn 1, Issue 1-2, 2002, Pages 219-222

  Takeda, H ^a   Mori, N ^a   Hamaguchi, C ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

energy band structure; Monte Carlo simulation; pseudo potential method; SOI MOSFET

Indexed keywords

BAND STRUCTURE; INTELLIGENT SYSTEMS; MONTE CARLO METHODS; MOSFET DEVICES; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

FULL BAND MONTE CARLO SIMULATION; NON PARABOLICITY; PSEUDOPOTENTIALS; SI LAYER; SOI-MOSFETS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 0012505558     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1020729625444     Document Type: Article

References (5)

1. Fisher B. and Hofmann K.R. 2000. Appl. Phys. Lett. 76: 583.
2. Fischetti M.V. and Laux S.E. 1988. Phys. Rev. B 38: 9721.
3. Fischett M.V. and Laux S.E. 1993. Phys. Rev. B 48: 2244.
4. Takagi S., Koga J., and Toriumi A. 1998. Jpn. J. Appl. Phys. 37: 1289.
5. Takeda H., Mori N., and Hamaguchi C. 2002. Physica B 314: 377.