Computer simulation of a nanoscale ballistic SOI MOSFET with a sub-10-nm Si layer

Russian Microelectronics

Volumn 32, Issue 4, 2003, Pages 224-232

  V'yurkov, V V ^a   Orlikovsky, A A ^a   Sidorov, A A ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); FERMI LEVEL; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; MOSFET DEVICES; POLYSILICON; RANDOM ACCESS STORAGE; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

ELECTRON VELOCITY; MULTIPLE SCATTERING; TRANSISTOR STRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 3543127844     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1024523531727     Document Type: Article

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