Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum boltzmann equation

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2258-2263

  Du, Gang ^a,b   Liu, Xiaoyan ^a,b   Xia, Zhiliang ^b   Kang, Jinfeng ^a,b   Wang, Yi ^a,b   Han, Ruqi ^b   Yu, HongYu ^a,c   Kwong, Dim Lee ^a,d  

^a IEEE   (China)

^b PEKING UNIVERSITY   (China)

^c IMEC   (Belgium)

^d The University of Texas at Austin   (United States)

Author keywords

Ge on insulator (GOI); Monte Carlo (MC) simulation; MOSFET

Indexed keywords

CHANNEL LENGTHS; GE-ON-INSULATOR (GOI); P-CHANNEL DEVICES;

LEAKAGE CURRENTS; MOSFET DEVICES; PROBLEM SOLVING; QUANTUM THEORY; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; STATISTICAL MECHANICS;

MONTE CARLO METHODS;

EID: 33646505668     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856806     Document Type: Article

References (21)

1. C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. Mcintyre, and K. C. Saraswat, "A sub 400°C Germanium MOSFET technology with high-K dielectric and metal gate," in IEDM Tech. Dig., 2002, pp. 437-440.
2. H. Shang, H. Okom-Schmidt, K. K. Chan, M. Copel, J. A. Ott, P. M. Kozlowski, S. E. Steen, S. A. Cordes, H. S. P. Wong, E. C. Jones, and W. E. Haensch, "High mobility p-channel Germanium MOSFETs with a thin Ge oxynitride gate dielectric," in IEDM Tech. Dig., 2002, pp. 441-444.
3. S. J. Whang et al., "Germanium p-&n MOSFETs fabricated with novel surface passivation (plasma-PH3 and thin AlN) and TaN/HfO2 gate stack," in IEDM Tech Dig., 2004, pp. 307-310.
4. A. Rahman, A. Ghosh, and M. Lundstrom, "Assessment of Ge n-MOSFET by quantum simulation," in IEDM Tech Dig., 2003, pp. 471-174.
5. T. Low et al., "Investigation of performance limits of Germanium double-gated MOSFETs," in IEDM Tech Dig., 2003, pp. 691-694.
6. S. E. Laux, "Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment," in IEDM Tech Dig., 2004, pp. 135-138.
7. G. Du, X. Liu, Z. Xia, and R. Han, "Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation," in IWCE-10, Oct. 2004.
8. H. Haug and A.-P. Jauho, Quantum Kinetics in Transport and Optics of Semiconductors. Berlin, Germany: Springer-Verlag, 1998.
9. H. Tsuchiya and T. Miyoshi, "Quantum transport modeling of ultrasmall semiconductor devices," IEICE Trans., vol. E82-C, no. 6, pp. 880-888, 1999.
10. H. Tsuchiya, B. Fischer, and K. Hess, "A fullband Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential," in IEDM Tech Dig., 2000, pp. 284-287.
11. A.-P. Jauho and L. Reggiani, "Quantum correction to the Monte Carlo solution of hot-electron transport in semiconductors," Solid State Electron., vol. 31, no. 3/4, pp. 535-538, 1988.
12. L. F. Register and K. Hess, "Theory of collision broadening through a sequence of scattering events with applications to semi classical Monte Carlo," Microelectron. Eng., vol. 47, pp. 353-355, 1999.
13. J. R. Chelikowsky and M. L. Cohen, "Nonlocal pseudopotential calculation for the electronic structure of eleven diamond and zinc-blende semiconductors," Phys. Rev. B, vol. 14, p. 556, 1976.
14. C. T. Sah, Fundamentals of Solid-State Electronics. Singapore: World Scientific, 1991.
15. T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, M. Morifuji, K. Taniguchi, and C. Hamaguchi, "A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model," J. Appl. Phys., vol. 75, no. 1, p. 297, 1994.
16. R. Thoma, H. J. Peifer, W. L. Engl, W. Quade, R. Brunetti, and C. Jacoboni, "An improved impact-ionization model for high-energy electron transport in Si with Monte Carlo simulation," J. Appl. Phys., vol. 69, no. 4, pp. 2300-2311, 1991.
17. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Modern Phys., vol. 55, no. 3, pp. 645-705, Jul. 1983.
18. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1985.
19. C. Jungemann, S. Keith, M. Bartels, and B. Meinerzhagen, "Efficient fullband Monte Carlo simulation of silicon devices," IEICE Trans. Electron, vol. E82-C, pp. 870-879, Jun. 1999.
20. S.-I. Takagi et al., IEEE Trans. Electron Devices, vol. 41, pp. 2357-2362, 1994.
21. M. Lundstrom and Z. Ren, "Essential physics of carrier transport in nanoscale MOSFETs," IEEE Trans. Electron Devices, vol. 49, no. 1, p. 133, Jan. 2002.