Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2892-2900

  Sadi, Toufik ^a   Kelsall, Robert W ^a   Pilgrim, Neil J ^b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b UNIVERSITY OF ABERDEEN   (United Kingdom)

Author keywords

Electrothermal simulations; III N; Monte Carlo (MC); Wurtzitc GaN AlGaN high electron mobility transistors (HEMTs)

Indexed keywords

ALUMINUM GALLIUM NITRIDE; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; HEATING; MONTE CARLO METHODS; SAPPHIRE;

CURRENT HANDLING; ELECTROTHERMAL SIMULATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847658089     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885099     Document Type: Article

References (26)

1. J. Y. Duboz, "GaN as seen by the industry," Phys. Stat. Sol., A, vol. 176, no. 5, pp. 5-14, 1999.
2. M. J. Uren, K. J. Nash, R. S. Balmer, T. Martin, E. Morvan, N. Caillas, S. L. Delage, D. Ducatteau, B. Grimbert, and J. C. D. Jaeger, "Punchthrough in short-channel AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 395-398, Feb. 2006.
3. P. Regoliosi, A. Reale, A. D. Carlo, P. Romanini, M. Peroni, C. Lanzieri, A. Angelini, M. Pirola, and G. Ghione, "Experimental validation of GaN HEMTs thermal management by using photocurrent measurements," IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 182-188, Feb. 2006.
4. max of 107 GHz," IEEE Electron Device Lett., vol. 20, no. 7, pp. 323-325, Jul. 1999.
5. Q. Chen, J. W. Yang, R. Gaska, M. A. Khan, M. S. Shur, G. J. Sullivan, A. L. Sailor, J. A. Higgings, A. T. Ping, and I. Adesida, "High-power microwave 0.25 - μm gate doped-channel GaN/AlGaN heterostructure field effect transistor," IEEE Electron Device Lett., vol. 19, no. 2, pp. 44-46, Feb. 1998.
6. J. Burm, W. J. Schaff, G. H. Martin, L. F. Eastman, H. Amano, and I. Akasaki, "Recessed gate GaN MODFETs," Solid State Electron., vol. 41. no. 2. pp. 247-250, Feb. 1997.
7. S. Yamakawa, S. Goodnick, S. Aboud, and M. Saraniti, "Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs," J. Comput. Electron., vol. 3. no. 3/4, pp. 299-303, Oct. 2004.
8. T.-H. Yu and K. F. Brennan, "Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 315-323, Feb. 2003.
9. B. Guo and U. Ravaioli, "Full band Monte Carlo simulation of wurtzite AlGaN/GaN MODFETs," J. Comput. Electron., vol. 1, no. 3, pp. 309311, Oct. 2002.
10. J. D. Albrecht, P. P. Ruden, S. C. Binari, and M. G. Ancona, "AlGaN/GaN heterostructure field-effect transistor model including thermal effects," IEEE Trans. Electron Devices, vol. 47, no. 11, pp. 2031-2036, Nov. 2000.
11. T. Sadi, R. Kelsall, and N. Pilgrim, "Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1768-1774, Aug. 2006.
12. W. Batty, C. E. Christoffersen, A. J. Pranks, S. David, C. M. Snowden, and M. B. Steer, "Electrothermal CAD of power devices and circuits with fully physical timedependent compact thermal modeling of complex nonlinear 3-D systems," IEEE Trans. Compon. Packag. Technol, vol. 24, no. 4, pp. 566-590, Dec. 2001.
13. 1-xN/AlN/GaN channel," Phys. Rev. B, Condens. Matter; vol. 71, no. 7, p. 075324, Feb. 2005.
14. M. Ramonas, A. Matulionis, and L. Rota, "Monte Carlo simulation of hotphonon and degeneracy effects in the AlGaN/GaN two-dimensional electron gas channel," Semicond. Sci. Technol., vol. 18, no. 2, pp. 118-123, Feb. 2003.
15. B. K. Ridley, "The LO phonon lifetime in GaN," J. Phys.: Condens. Matter, vol. 8, no. 37, pp. L511-L513, 1996.
16. J. D. Albrecht, R. P. Wang, P. P. Ruden, M. Farahmand, and K. F. Brennan, "Electron transport characteristics of GaN for high temperature device modeling," J. Appl. Phys., vol. 83, no. 9, pp. 4777-4781, May 1998.
17. C. Moglestue, F. A. Buot, and W. T. Andersen, "Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors," J. Appl. Phys., vol. 78, no. 4, pp. 2343-2348, Aug. 1995.
18. O. Nilsson, H. Mehling, R. Horn, J. Fricke, R. Hofmann, S. Mller, R. Eckstein, and D. Hofmann, "Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K)," High Temp., High Press., vol. 29. no. 1, pp. 73-79, 1997.
19. C. J. Glassbrenner and G. A. Slack, "Thermal conductivity of silicon and germanium from 3 °K to the melting point," Phys. Rev., vol. 134, no. 4A, pp. A1058-A1069, 1964.
20. D. Kotchetkov, J. Zou, and A. A. Balandin, "Theoretical investigation of thermal conductivity in wurtzite GaN," in Proc. Mater. Res. Soc. Symp., 2002, vol. 731, pp. W5.11.1-W5.11.6.
21. (2005). Single crystal sapphire Kyocera company brochure. [Online]. Available: http://global.kyocera.com/prdct/fc/product/material/ sap/index.html
22. T.-H. Yu and K. F. Brennan, "Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures, " J. Appl. Phys., vol. 89, no. 7, pp. 3827-3834, Apr. 2001.
23. M. Farahmand, C. Gareto, E. Bellotti, K. F. Brennan, M. Goano, E. Ghillino, G. Ghione, J. D. Albrecht, and P. P. Ruden, "Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 535-542, Mar. 2001.
24. t linearity of AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2117-2123, Oct. 2005.
25. N. Shigekawa, K. Onodera, and K. Shiojima, "Device temperature measurement of highly biased AlGaN/GaN high-electron-mobility transistors," Jpn. J. Appl. Phys., vol. 42, no. 4B, pt. 1, pp. 2245-2249, 2003.
26. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, "Transient electron transport in wurtzite GaN, InN and AIN," J. Appl. Phys., vol. 85, no. 11, pp. 7727-7734, Jun. 1999.