Simulation of electron transport in InGaAs/AlGaAs HEMTs using an electrothermal Monte Carlo method

IEEE Transactions on Electron Devices

Volumn 53, Issue 8, 2006, Pages 1768-1774

  Sadi, Toufik ^a   Kelsall, Robert ^a   Pilgrim, Neil ^b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b UNIVERSITY OF ABERDEEN   (United Kingdom)

Author keywords

Electrothermal modeling; HEMTs; InGaAs AlGaAs; Monte Carlo (MC)

Indexed keywords

ABSORPTION; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; MONTE CARLO METHODS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TEMPERATURE;

ELECTRONIC TRAJECTORY SIMULATION; ELECTROTHERMAL MODELING; ELECTROTHERMAL SIMULATOR; FAST FOURIER SERIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746624336     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.877698     Document Type: Article

References (11)

1. N. J. Pilgrim, "Electrothermal Monte Carlo simulation of semiconductor devices," Ph.D. dissertation, Univ. Leeds, Leeds, U.K., 2003.
2. A. Raman, D. G. Walker, and T. S. Fisher, "Simulation of nonequilibrium thermal effects in power LDMOS transistors," Solid-State Electron., vol. 47, no. 8, pp. 1265-1273, Aug. 2003.
3. C. Moglestue, F. A. Buot, and W. T. Anderson, "Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors," J. Appl. Phys., vol. 78, no. 4, pp. 2343-2348, Aug. 1995.
4. W. Batty, C. E. Christoffersen, A. J. Pranks, S. David, C. M. Snowden, and M. B. Steer, "Electrothermal CAD of power devices and circuits with fully physical time-dependent compact thermal modeling of complex nonlinear 3-D systems," IEEE Trans. Compon. Packag. Technol., vol. 24, no. 4, pp. 566-590, Dec. 2001.
5. F. Bonani and G. Ghione, "On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature dependent and piecewise inhomogeneous thermal conductivity," Solid-State Electron., vol. 38, no. 7, pp. 1409-1412, 1995.
6. N. J. Pilgrim, W. Batty, and R. W. Kelsall, "Thermally self-consistent Monte Carlo device simulations," J. Comput. Electron., vol. 1, no. 4, pp. 263-266, Jul. 2002.
7. N. J. Pilgrim, W. Batty, R. W. Kelsall, and C. M. Snowden, "Nanoscale electrothermal co-simulation: Compact dynamic models of hyperbolic heat transport and self-consistent device Monte Carlo," Microelectron. J., vol. 35, no. 10, pp. 823-830, 2004.
8. N. J. Pilgrim, W. Batty, and R. W. Kelsall, "Electrothermal Monte Carlo simulations of InGaAs/AlGaAs HEMTs," J. Comput. Electron., vol. 2, no. 2-4, pp. 207-211, 2003.
9. S. J. Zurek, R. B. Darling, K. J. Kuhn, and M. C. Foisy, "Elevated temperature performance of pseudomorphic AlGaAs/InGaAs MODFET's," IEEE Trans. Electron. Devices, vol. 45, no. 1, pp. 2-8, 1998.
10. N. Shigekawa, K. Onodera, and K. Shiojima, "Device temperature measurement of highly biased AlGaN/GaN high-electron-mobility transistors," Jpn. J. Appl. Phys., vol. 42, no. 4B, pt. 1, pp. 2245-2249, 2003.
11. U. Lindefelt, "Heat generation in semiconductor devices," J. Appl. Phys., vol. 75, no. 2, pp. 942-957, 1994.