2D ensemble Monte Carlo modelling of bulk and FD SOI MOSFETs: Active layer thickness and noise performance

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Rengel, R ^a   Pardo, D ^a   Martin Martinez M J ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; GATES (TRANSISTOR); MICROSCOPIC EXAMINATION; MICROWAVES; MONTE CARLO METHODS; PHONONS; SCATTERING; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

MONTE CARLO SIMULATORS; PHONON SCATTERING;

MOSFET DEVICES;

EID: 1942452279     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/068     Document Type: Conference Paper

References (6)

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2. Colinge J P 1997 Silicon-on-Insulator Technology: Materials to VLSI 2nd edn (Norwell: Kluwer)
3. Rengel R et al 2002 Semicond. Sci. Technol. 17 1149
4. van der Ziel A 1986 Noise in Solid State Devices and Circuits (New York: Wiley)
5. Dambrine et al 1999 IEEE Trans. Electron Devices 46 1733
6. Greaves S D and Unwin R T 1993 Microwave Opt. Tech. Lett. 660