Comparison of trench gate IGBT and CIGBT devices for increasing the power density from high power modules

IEEE Transactions on Power Electronics

Volumn 25, Issue 3, 2010, Pages 583-591

  Luther King, Ngwendson ^a   Narayanan, Ekkanath Madathil Sankara ^a   Coulbeck, Lee ^b   Crane, Allan ^c   Dudley, Robert ^d  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DYNEX SEMICONDUCTOR LTD   (United Kingdom)

^c GENERAL ELECTRIC COMPANY   (United States)

^d Dudley Associates   (United Kingdom)

Author keywords

Controlled thyristor; MOS trench clustered insulated gate bipolar transistor (T CIGBT); Terms Cluster insulated gate bipolar transistor (CIGBT)

Indexed keywords

CONDUCTION CURRENT; CONDUCTION LOSS; CONTROLLED THYRISTOR; DRIFT REGIONS; GATE VOLTAGES; HIGH POWER APPLICATIONS; HIGH POWER MODULE; HIGH-VOLTAGE IGBT; MOS TRENCH-CLUSTERED INSULATED GATE BIPOLAR TRANSISTOR (T-CIGBT); OUTPUT POWER DENSITY; PER UNIT; POWER DENSITIES; POWER ELECTRONIC MODULES; SIMULATION RESULT; STATE CONDUCTION; TERMS-CLUSTER INSULATED GATE BIPOLAR TRANSISTOR (CIGBT); THYRISTOR STRUCTURES; TRENCH GATE IGBT; TRENCH GATES;

BIPOLAR TRANSISTORS; ELECTRIC SWITCHGEAR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOS DEVICES; PLASMA DENSITY; THYRISTORS;

ACTIVE FILTERS;

EID: 77950542014     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2030327     Document Type: Article

References (29)

1. T. Ogura, K. Sugiyama, H. Ninomiya, T. Inoue, S. Hasegawa, H. Matsuda, and H. Ohashi, "High turn-off current capability of parallel-connected 4.5 kV trench IEGT," IEEE Trans. Electron Devices, vol.50, no.5, pp. 1392- 1397, May 2003.
2. A. Piazzesi and L. Meysenc, "Series connection of 3.3 kV IGBTs with active voltage balancing," in Proc. 35th IEEE Power Electron. Spec. Conf., Aachen, Germany, 2004, pp. 893-898.
3. K. Sommer, J. Göttert, G. Lefranc, and R. Spanke, "Multichip high power IGBT modules for traction and industrial applications," in Proc. EPE, 1997, pp. 1112-1116.
4. M. Rahimo, U. Schlapbach, A. Kopta, J. Vobecky, D. Schneider, and A. Baschnagel, "A high current 3300 V module employing reverse conducting IGBTs setting a new benchmark in output power capability," in Proc. ISPSD, 2008, pp. 68-71.
5. C. M. Johnson, "Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applications," Int. J. Electron., vol.90, no.11-12, pp. 667-693, Nov. 2003.
6. Y. Tomomatsu, S. Kusunoki, K. Satoh, J. Yamada,Y. Yu, J. F. Donlon, H. Iwamoto, and E. R. Motto, "Characteristics of a 1200 V CSTBT optimized for industrial applications," in Proc. 36th IAS Annu. Meet., Oct. 2001, pp. 1060-1065. (Pubitemid 33058480)
7. E. M. Sankara Narayanan, M. Sweet, O. Spulber, J. V. Subhas Chandra Base, and M. M. De Souza, "Clustered insulated gate bipolar transistor (CIGBT): A new power semiconductor device," in Proc. 10th IWPSD, 1999, pp. 1307-1312.
8. N. Luther-King, M. Sweet, O. Spulber, M. M. De Souza, and E. M. S. Narayanan, "Anode-gated MOS-controlled thyristor with ultra-fast switching capability," in Proc. ISPSD, 2003, pp. 299-302.
9. K. Vershinin, M. Sweet, O. Spulber, S. Hardikar, N. Luther-King, M. M. De Souza, S. Sverdloff, and E. M. Sankara Narayanan, "Influence of the design parameters on the performance of 1.7 kV, NPT, planar clustered insulated gate bipolar transistor (CIGBT)," in Proc. ISPSD, 2004, pp. 269- 272.
10. N. Luther-King, M. Sweet, O. Spulber, K. Vershinin, M. M. De Souza, and E. M. Sankara Narayanan, "MOS control device concepts for ACAC matrix converter applications: The HCD concept for high-efficiency anode-gated devices," IEEE Trans. Electron Devices, vol.52, no.9, pp. 2075-2080, Sep. 2005. (Pubitemid 41410746)
11. M. Sweet, N. Luther-King, E. M. Sankara Narayanan, and K. Kong, "Experimental demonstration of 3.3 kV planar CIGBT in the NPT technology," in Proc. ISPSD, 2008, pp. 48-51.
12. O. Spulber, M. Sweet, K. Vershinin, N. Luther-King, M. M. De Souza, and E. M. Sankara Narayanan, "A novel, 1.2 kV trench clustered IGBT with ultra high performance," in Proc. ISPSD, 2001, pp. 323- 326. (Pubitemid 32878298)
13. K. Vershinin, M. Sweet, L. Ngwendson, J. Thomson, P. Waind, J. Bruce, and E. M. Sankara Narayanan, "Experimental demonstration of a 1.2 kV trench clustered insulated gate bipolar transistor in non-punch-through technology," in Proc. ISPSD, 2006, pp. 181-184. (Pubitemid 46659657)
14. J. C. Nicholls,M.R. Sweet, K.V.Vershinin, and E.M. Sankara Narayanan, "Zero-current soft-switching performance of 1200-V PT clustered insulated gate bipolar transistor," IEEE Trans. Power Electron., vol.22, no.4, pp. 1177-1185, Jul. 2007.
15. S. T. Kong, L.-K. Ngwendson, M. Sweet, D. Kumar, and E. M. Sankara, "Turn-off behavior of 1.2 kV/25 A NPT-CIGBT under clamped inductive load switching," IEEE Trans. Power Electron., vol.24, no.4, pp. 1100- 1106, Apr. 2009.
16. I. Ji, K. Cho, S. Lee, S. Kim, K. Oh, C. Yun, and M. Han, "A new soft self-clamping scheme for improving the self-clamped inductive switching (SCIS) capability of automotive ignition IGBT," in Proc. ISPSD 2007, pp. 145-148. (Pubitemid 351306508)
17. Z. J. Shen,D. Briggs, and S. P. Robb, "Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBT's," IEEE Electron Devices Lett., vol.21, no.3, pp. 119-122, Mar. 2000. (Pubitemid 30567969)
18. Sysnopsys TCAD Sentaurus Device Package, 2007.
19. Datasheet for DIM400GCM33-F000 (3.3 kV/800 A FS IGBT Module).
20. X. Kang, A. Caiafa, E. Santi, J. L. Hudgins, and P. R. Palmer, "Characterization and modelling of high-voltage field-stop IGBTs," IEEE Trans. Ind. Appl., vol.39, no.4, pp. 922-928, Jul./Aug. 2003.
21. K. Fujii, P. Koellensperger, and R.W. De Doncker, "Characterization and comparison of high blocking voltage IGBTs and IEGTs under hard- and soft-switching conditions," IEEE Trans. Power Electron., vol.23, no.1, pp. 172-179, Jan. 2008. (Pubitemid 351573271)
22. L. Yang and W. G. H. Odendaal, "Measurement-based method to characterize parasitic parameters of the integrated power electronics modules," IEEE Trans. Power Electron., vol.22, no.1, pp. 54-62, Jan. 2007. (Pubitemid 46231757)
23. S. Pittet and A. Rufer, "The equivalent electron density concept for static and dynamic modelling of the IGBT base in softand hard-switching applications," IEEE Trans. Power Electron., vol.22, no.6, pp. 2223-2233, Nov. 2007. (Pubitemid 350154056)
24. K. Fujii, P. Koellensperger, and R.W. De Doncker, "Characterization and comparison of high blocking voltage IGBTs and IEGTs under hard- and soft-switching conditions," IEEE Trans. Power Electron., vol.23, no.1, pp. 172-179, Jan. 2008.
25. P. R. Palmer, H. S. Rajamani, and J. C. Joyce, "Behaviour of IGBT modules under short circuit conditions," in Proc. Conf. Record 2000 IEEE Ind. Appl. Annu. Meet., Rome, Italy, Oct., pp. 3010-3015.
26. M. Takei, Y. Minoya, N. Kumagai, and K. Sakurai, "Analysis of IPM current oscillation under short circuit condition," in Proc. ISPSD, 1998, pp. 89-93.
27. S. Musumeci, R. Pagano, and A. Raciti, "Transient behavior of IGBTs submitted to fault under load conditions," in Proc. Ind. Appl. Conf. (IAS), 2002, pp. 2182-2188.
28. A. Benmansour, S. Azzopardi, J. C. Martin, and E. Woirgard, "Failure mechanism of trench IGBT under short-circuit after turn-off," Microelectron. Rel., vol.46, pp. 1778-1783, 2006. (Pubitemid 44278091)
29. A. Hefner, "Analytical modelling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)," IEEE Trans. Ind. Appl., vol.26, no.6, pp. 995-1005, Dec. 1990.