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Volumn , Issue , 2006, Pages

Characterization and comparison of high blocking voltage IGBTs and IEGTs under hard- and soft-switching conditions

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; ELECTRIC SWITCHES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER CONVERTERS; ZERO VOLTAGE SWITCHING;

EID: 42449100765     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2006.1712138     Document Type: Conference Paper
Times cited : (11)

References (14)
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    • The New 6.5 kV IGBT Module: A Reliable Device for Medium Voltage Applications
    • T. Schuetze et al, "The New 6.5 kV IGBT Module: A Reliable Device for Medium Voltage Applications", PCIM 2001.
    • PCIM 2001
    • Schuetze, T.1
  • 4
    • 4944227122 scopus 로고    scopus 로고
    • M. Rahimo, et al, Switching-self-clamping-mode SSCM, a break-through in SOA performance for high voltage IGBTs and diodes, The 16th International Symposium on Power Semiconductor Devices and ICs, 2004, pp. 437 - 440.
    • M. Rahimo, et al, "Switching-self-clamping-mode "SSCM", a break-through in SOA performance for high voltage IGBTs and diodes", The 16th International Symposium on Power Semiconductor Devices and ICs, 2004, pp. 437 - 440.
  • 5
    • 0036051387 scopus 로고    scopus 로고
    • Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8 kV
    • M. Rahimo et al, "Extending the Boundary Limits of High Voltage IGBTs and Diodes to above 8 kV", International Symposium on Power Semiconductor Devices ICs, 2002, pp. 41-44.
    • (2002) International Symposium on Power Semiconductor Devices ICs , pp. 41-44
    • Rahimo, M.1
  • 6
    • 0036051671 scopus 로고    scopus 로고
    • New collector design concept for 4.5 kV injection enhanced gate transistor (IEGT)
    • T. Inoue et al, "New collector design concept for 4.5 kV injection enhanced gate transistor (IEGT)", International Symposium on Power Semiconductor Devices ICs, 2002, pp. 49-52.
    • (2002) International Symposium on Power Semiconductor Devices ICs , pp. 49-52
    • Inoue, T.1
  • 7
    • 0042172925 scopus 로고    scopus 로고
    • High turn-off current capability of parallel-connected 4.5 kV trench IEGT
    • May
    • T. Ogura et al, "High turn-off current capability of parallel-connected 4.5 kV trench IEGT", in IEEE Transactions of Electron Devices, Vol. 50, Issue 5, May 2003, pp. 1392 - 1397.
    • (2003) IEEE Transactions of Electron Devices , vol.50 , Issue.5 , pp. 1392-1397
    • Ogura, T.1
  • 8
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    • Electrical and mechanical package design for 4.5 kV ultra high power IEGT with 6kA turn-off capability
    • I. Omura et al, "Electrical and mechanical package design for 4.5 kV ultra high power IEGT with 6kA turn-off capability", International Symposium on Power Semiconductor Devices ICs, 2003, pp. 114 - 117.
    • (2003) International Symposium on Power Semiconductor Devices ICs , pp. 114-117
    • Omura, I.1
  • 9
    • 0024906842 scopus 로고    scopus 로고
    • W. McMurray, Resonant Snubbers With Auxiliary Switches, in Proceedings of IAS Annual Meeting, 1989, pp. 829 - 834.
    • W. McMurray, "Resonant Snubbers With Auxiliary Switches", in Proceedings of IAS Annual Meeting, 1989, pp. 829 - 834.
  • 10
    • 0025545401 scopus 로고    scopus 로고
    • R. W. DeDoncker, J. P. Lyons, The Auxiliary Resonant Commutated Pole Converter, in Proceedings of IAS Annual Meeting, 1990, pp. 1228-1235.
    • R. W. DeDoncker, J. P. Lyons, "The Auxiliary Resonant Commutated Pole Converter", in Proceedings of IAS Annual Meeting, 1990, pp. 1228-1235.
  • 11
    • 0033325520 scopus 로고    scopus 로고
    • S. Bernet et al, Evaluation of a high power ARCP voltage source inverter with IGCTs, in Proceedings of IAS Annual Meeting, 1999, 2, pp. 1063 - 1072.
    • S. Bernet et al, "Evaluation of a high power ARCP voltage source inverter with IGCTs", in Proceedings of IAS Annual Meeting, 1999, vol.2, pp. 1063 - 1072.
  • 12
    • 0037235452 scopus 로고    scopus 로고
    • R. Teichmann et al, State-of-the-art Low Voltage and High Voltage IGBTs in Soft Switching Operation, in Proceedings of Applied Power Electronics Conference and Exposition, 2003, 2, pp. 938 - 945.
    • R. Teichmann et al, "State-of-the-art Low Voltage and High Voltage IGBTs in Soft Switching Operation", in Proceedings of Applied Power Electronics Conference and Exposition, 2003, vol.2, pp. 938 - 945.
  • 13
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  • 14
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    • U. Schwarzer, R. W. De Doncker, R. Sommer, G. Zaiser, Snubberless Operation of Series Connected 6.5 kV IGBTs for High-Power and High-Voltage Applications, in Proceeding of EPE, 2003.
    • U. Schwarzer, R. W. De Doncker, R. Sommer, G. Zaiser, "Snubberless Operation of Series Connected 6.5 kV IGBTs for High-Power and High-Voltage Applications", in Proceeding of EPE, 2003.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.