Characterization and comparison of high blocking voltage IGBTs and IEGTs under hard- and soft-switching conditions

IEEE Transactions on Power Electronics

Volumn 23, Issue 1, 2008, Pages 172-179

  Fujii, Kansuke ^a   Koellensperger, Peter ^a   De Doncker, Rik W ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Auxiliary resonant commutated pole (ARCP); Insulated gate bipolar transistors; Soft switching

Indexed keywords

POWER ELECTRONICS; ZERO VOLTAGE SWITCHING;

AUXILIARY RESONANT COMMUTATED POLE; HARD-SWITCHING; INJECTION-ENHANCED GATE TRANSISTORS; SOFT-SWITCHING; SWITCHING LOSSES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 38349042433     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.911771     Document Type: Article

References (17)

1. F. Auerbach et al., "6.5 kV IGBT-modules," in Industry Applicat. Conf., 1999, vol. 3, pp. 1770-1774.
2. J. G. Bauer et al., "6.5 kV-modules using IGBT with field stop technology," in Proc. Int. Symp. Power Semicond. Device ICs, 2001, pp. 121-124.
3. T. Schuetze et al., "The new 6.5 kV IGBT module: A reliable device for medium voltage applications," in Proc. PCIM, 2001, pp. 39-46.
4. M. Rahimo et al., "Switching-self-clamping-mode "SSCM," a break-through in SOA performance for high voltage IGBTs and diodes," in Proc. 16th Int. Symp. Power Semicond. Devices ICs, 2004, pp. 437-440.
5. M. Rahimo et al., "Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV," in Proc. Int. Symp. Power Semicond. Devices ICs, 2002, pp. 41-44.
6. T. Inoue et al., "New collector design concept for 4.5 kV injection enhanced gate transistor (IEGT)," in Proc. Int. Symp. Power Semicond. Devices ICs, 2002, pp. 49-52.
7. T. Ogura et al., "High turn-off current capability of parallel-connected 4.5 kV trench IEGT," IEEE Trans. Electron Devices vol. 50, no. 5, pp. 1392-1397, May 2003.
8. I. Omura et al., "Electrical and mechanical package design for 4.5 kV ultra high power IEGT with 6 kA turn-off capability," in Proc. Int. Symp. Power Semicond. Devices ICs, 2003, pp. 114-117.
9. W. McMurray, "Resonant snubbers with auxiliary switches," in Proc. IAS Annu. Meeting, 1989, pp. 829-834.
10. R. W. DeDoncker and J. P. Lyons, "The auxiliary resonant commutated pole converter," in Proc. IAS Annu. Meeting, 1990, pp. 1228-1235.
11. S. Bernet et al., "Evaluation of a high power ARCP voltage source inverter with IGCTs," in Proc. IAS Annu. Meeting, 1999, vol. 2, pp. 1063-1072.
12. R. Teichmann et al., "State-of-the-art low voltage and high voltage IGBTs in soft switching operation," in Proc. Appl. Power Electron. Conf. Expo., 2003, vol. 2, pp. 938-945.
13. B. Gutsmann et al., "Repetitive short circuit behavior of trench-/field-stop IGBTs," in Proc. PCIM, 2003, CD-ROM.
14. U. Schwarzer, R. W. De Doncker, R. Sommer, and G. Zaiser, "Snubberless operation of series connected 6.5 kV IGBTs for high-power and high-voltage applications," in Proc. EPE, 2003, CD-ROM.
15. C. Turpin, L. Deprez, F. Forest, F. Richardeau, and T. A. Meynard, "A ZVS imbricated cell multilevel inverter with auxiliary resonant commutated poles," IEEE Trans. Power Electron., vol. 17, no. 6, pp. 874-882, Nov. 2002.
16. F. Hinrichsen, G. Tareilus, and W.-R. Canders, "1 MVA-ARCPI with high voltage IGBT-modules-Design and practical experience," in Proc. EPE 2003, CD-ROM.
17. E. Hiraki, M. Nakaoka, T. Horiuchi, and Y. Sugawara, "Practical power loss simulation analysis for soft switching and hard switching PWM inverters," in Proc. PCC, Osaka, Japan, 2002, vol. 2, pp. 553-558.