The equivalent electron density concept for static and dynamic modeling of the IGBT base in soft- and hard-switching applications

IEEE Transactions on Power Electronics

Volumn 22, Issue 6, 2007, Pages 2223-2233

  Pittet, Serge ^a   Rufer, Alfred ^b  

^a CERN   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

Finite element analysis; Insulated gate bipolar transistor (IGBT); MOSFET

Indexed keywords

BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MOSFET DEVICES;

COLLECTOR-BASE JUNCTION; GATE-COLLECTOR CAPACITANCE; SOFT-SWITCHING/HARD-SWITCHING APPLICATIONS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 36349029070     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.909254     Document Type: Article

References (16)

1. S. Pittet and A. Rufer, "Importance of quasi-saturation effect in the bipolar junction of high voltage NPT-igbts for power calculations," in Proc. Int. Conf. Power Electron. Intell. Motion Power Quality PCIM Nuernberg, Germany, Jun. 2001, pp. 57-61.
2. K. Sheng, B. W. Williamsa, and S. J. Finney, "A review of IGBT models," IEEE Trans. Power Electron., vol. 15, no. 6, pp. 1250-1266, Nov. 2000.
3. A. R. Hefner, "An experimentally verified IGBT model implemented in the saber circuit simulator," IEEE Trans. Power Electron., vol. 9, no. 5, pp. 532-542, Sep. 1994.
4. K. Sheng, S. J. Finney, and B. Williams, "A new analytical IGBT model with improved electrical characteristics," IEEE Trans. Power Electron., vol. 14, pp. 98-107, Jan. 1999.
5. D. W. Berning and A. R. Hefner, "Igbt model validation for soft-switching applications," IEEE Trans. Ind. Applicat., vol. 37, pp. 650-660, Mar. 2001.
6. D. E. Kane and R. M. Swanson, "Modeling of electron-hole scattering in semiconductor devices," IEEE Trans. Electron Devices, vol. 40, pp. 1496-1500, Aug. 1993.
7. X. Yuan, F. Udrea, L. Coulbeck, P. Waind, and G. Amaratunga, "On-state analytical modeling of igbts with local lifetime control," IEEE Trans. Power Electron., vol. 17, pp. 815-823, Sep. 2002.
8. N. Mohan, T. Undeland, and W. Robbins, Power Electronics. New York: Wiley, 1995.
9. S. Pittet, "Modélisation physique d'un transistor de puissance igbt - traînée en tension à l'enclenchement" Ph.D. dissertation, Swiss Federal Inst. Technol., Lausanne, 2005 [Online]. Available: http:// library.epfl.ch/theses/?nr=3215
10. C. Canali, G. Majni, R. Minder, and G. Ottaviani, "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature," IEEE Trans. Electron Devices, vol. ED-22, pp. 1045-1047, 1975.
11. C. C. McAndrew, B. K. Bhattacharyya, and O. Wing, "A single-piece continuous MOSFET model including subthreshold conduction," IEEE Electron Device Lett., vol. 12, pp. 565-567, Oct. 1991.
12. D. Munteanu and A. M. Ionescu, "Modeling of drain current overshoot and recombination lifetime extraction in floating-body submicron SOI mosfets," IEEE Trans. Electron Devices, vol. 49, pp. 1198-1205, Jul. 2002.
13. J. S. Hamel and R. Selvakumar, "The general transient charge control relation: A new charge control relation for semiconductor devices," IEEE Trans. Electron Devices, vol. 38, pp. 1467-1476, Jun. 1991.
14. J. A. Seitchik and J. S. Hamel, "Transient base dynamics of bipolar transistors in high injection," IEEE Trans. Electron Devices, vol. 41, pp. 2385-2390, Dec. 1994.
15. K. Suzuki, S. Satoh, and N. Nakayama, "Transient analysis of stored charge in neutral base region," IEEE Trans. Electron Devices, vol. 39, no. 5, pp. 1164-1169, May 1992.
16. S. Salama, Novel soft turn-on inverter for medium and high power propulsion Tech. Rep., Daimler-Benz AG, 1997.