Characterization and Modeling of High-Voltage Field-Stop IGBTs

IEEE Transactions on Industry Applications

Volumn 39, Issue 4, 2003, Pages 922-928

  Kang, Xiaosong ^a,b   Caiafa, Antonio ^a   Santi, Enrico ^a   Hudgins, Jerry L ^a   Palmer, Patrick R ^c  

^a University of South Carolina   (United States)

^b EATON CORPORATION   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Field stop insulated gate bipolar transistor (FSI GBT); High voltage IGBT; Physics based power semiconductor models; Power semiconductors modeling

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; SEMICONDUCTOR JUNCTIONS;

POWER DEVICES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0141643281     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2003.814547     Document Type: Article

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