Anode-gated MOS controlled thyristor with ultra-fast switching capability

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 299-302

  Luther King, N ^a   Sweet, M ^a   Spulber, O ^a   Vershinin, K ^a   De Souza, M M ^a   Narayanan, E M S ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; SWITCHING; THYRISTORS;

TURN-OFF LOSS;

MOS DEVICES;

EID: 0042014502     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. Huang Q., Amaratunga.,G.: "Analysis of double trench IGBT", Solid States Electronics, 38(4) pp.829-839, 1994.
2. Narayanan, E.M.S., "A new Power Semiconductor Device", Proc. IWPSD'99; pp. 1307-1312, 1999.
3. Vershinin K. et al., "A Novel, 2.4 kV Clutered IGBT", Power Electronics Europe, Issue 1, pp. 19-23, 2001.
4. N. Luther-king, et al., "The 6.5kV HB- CIGBT ", Solid State Electronics, Vol. 45, pp.71-77, 2001.
5. TMA MEDICI & TSUPREM4 Manual version 2002.2