Zero-current soft-switching performance of 1200-V PT clustered insulated gate bipolar transistor

IEEE Transactions on Power Electronics

Volumn 22, Issue 4, 2007, Pages 1177-1185

  Nicholls, Jonathan C ^a   Sweet, Mark R ^a   Vershinin, Konstantin V ^a   Narayanan, E M Sankara ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Clustered insulated gate bipolar transistor (CIGBT); Soft switching; Zero current switching (ZCS)

Indexed keywords

CLUSTERED INSULATED GATE BIPOLAR TRANSISTOR; SOFT-SWITCHING; ZERO-CURRENT SWITCHING;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); OPTIMIZATION; SWITCHING CIRCUITS;

POWER ELECTRONICS;

EID: 34547123819     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2007.900467     Document Type: Article

References (17)

1. M. Sweet, O. Spulber, S. C. Bose, M. M. De Souza, and E. M. S. Narayanan, "Clustered insulated gate bipolar transistor: A new power semiconductor device," presented at the 10th Int. Workshop on Physics of Semiconductor Devices, 1999.
2. N. Mohan, T. M. Underland, and W. Robbins, Power Electronics: Converters, Applications and Design. New York: Wiley, 1994.
3. M. Sweet et al., "Clustered insulated gate bipolar transistor: A new power semiconductor device," Proc. Inst. Elect. Eng. Circuits, Devices, Syst., vol. 148, no. 2, pp. 75-78, Apr. 2001.
4. E. M. S. Narayanan et al., "A novel, clustered insulated gate bipolar transistor for high power applications," in Proc. Int. Semiconductor Conf., 2000, vol. 1, pp. 173-181.
5. K. Vershinin et al., "Influence of design parameters on the performance of 20 A, 1.2 KV PT clustered insulated bipolar transistor (CIGBT)," presented at the Int. Symp. Power Electrical Drives, Automation and Motion, 2006.
6. B. J. Baliga, Power Semiconductor Devices. Boston, MA: PWS, 1996.
7. M. Trivedi and S. Pendharkar, "Switching characteristics of MCT's and IGBT's in power converters," IEEE Trans. Electron Devices, vol. 43, no. 11, pp. 1994-2003, Nov. 1996.
8. S. Pendharkar and K. Shenai, "A critique of the turn-on physics of power bipolar devices," presented at the Bipolar/BiCMOS Circuits and Technology Meeting, 1995.
9. M. Sweet, J. Nicholls, K. Vershinin, O. Spulber, and E. M. S. Narayanan, "Zero voltage switching of a 1200 V PT clustered insulated gate bipolar transistor," presented at the 17th Int. Symp. Power Semiconductor Devices and IC's, May 2005.
10. I. Widjaja, A. Kurnia, D. Divan, and K. Shenai, "Switching dynamics of IGBT in soft-switching converters," IEEE Trans. Electron Devices, vol. 42, no. 3, pp. 445-454, Mar. 1995.
11. S. Pendharkar and K. Shenai, "Zero voltage switching behavior of punch through and non-punch through IGBT's," IEEE Trans. Electron Devices vol. 45, no. 8, pp. 1826-1835, Aug. 1998.
12. M. Trivedi and K. Shenai, "Internal dynamics of IGBT under zero-voltage and zero-current switching conditions," IEEE Trans. Electron Devices vol. 46, no. 6, pp. 1274-1282, Jun. 1999.
13. L. Hsin-Hua, N. H. Kutkut, D. Divan, and K. Shenai, "Design considerations of IGBT's in resonant converter applications," IEEE J. Solid-State Circuits, vol. 31, no. 1, pp. 97-105, Jan. 1996.
14. M. Trivedi and K. Shenai, "Modeling the Turn-off of IGBT's in hard and soft switching applications," IEEE Trans. Electron Devices, vol. 44, no. 5, pp. 887-893, May 1997.
15. B. J. Baliga, "The MOS-gated emitter switched thyristor," IEEE Electron Device Lett., vol. 11, no. 2, pp. 75-77, Feb. 1990.
16. A. Kurnia, O. H. Stielau, G. Venkataramanan, and D. M. Divan, :LOss mech anisms in IGBT's under zero voltage switching," in Proc. 23rd Annu. IEEE Power Electronics Specialists Conf., Jul. 1992, vol. 2, pp. 1011-1017.
17. K. Vershinin et al., "Influence of design parameters on the performance 1.7 KV NPT Planer CIGBT," presented at the Int. Symp. Power Semiconductor Devices and IC's, 2004.