Experimental demonstration of 3.3kV planar CIGBT in NPT technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 48-51

  Sweet, M ^a   Luther King, N ^a   Kong, S T ^a   Sankara Narayanan, E M ^a   Bruce, J ^b   Ray, Shona ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Semefab Scotland Ltd

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTERED INSULATED GATE BIPOLAR TRANSISTOR; INTERNATIONAL SYMPOSIUM; POWER SEMICONDUCTOR DEVICES;

BIPOLAR TRANSISTORS; COMPUTER NETWORKS; ELECTRIC CONDUCTIVITY; ELECTRIC SWITCHGEAR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; THYRISTORS;

SEMICONDUCTOR DEVICES;

EID: 51549088379     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538894     Document Type: Conference Paper

References (8)

1. th IWPSD, 1999, pp. 1307-1312
2. M. Sweet, O. Spulber, J. V.Subhas Chandra Bose, L.Ngwendson, K.V.Vershinin, M.M.De Souza and E.M.Sankara Naravanan, "Clustered insulated gate bipolar transistor: a new power semiconductor device", IEE Pro.-Circuits Devices Syst , Vol. I48. No. 2, April 2001, pp. 75-78
3. K. Vershinin, M. Sweet, J. V. S. C Base, O. Spulber, N. Luther-King, M. M. De Souza, S. Sverdlof E.M. Sankara Narayanan, D. Hinchley, I. Leslie, J. Bruce: "A novel. ultra-high performance 2.4kV clustered insulated gate bipolar transistor" Power System World 2001
4. N. Luther-King, M. Sweet, O. Spulber, M. M. De Souza, and E. M. S. Narayanan, "Anode-gated MOS-controlled thyristor with ultra-fast switching capability," in Proc. ISPSD, 2003, pp. 299-302.
5. O. Spulber, M. Sweet, K. Vershinin, N. Luther-King, M. M. De Souza and E.M. Sankara Narayanan: "A Novel, 1.2 kV Trench Clustered IGBT with ultra high performance", ISPSD 2001, pp. 323-326
6. K. Vershinin, M. Sweet, O. Spulber, S. Hardikar, N. Luther-King, M. M. De Souza, S. Sverdloff and E. M. Sankara Narayanan: "Influence of the design parameters on the performance of 1.7 kV, NPT, planar Clustered Insulated Gate Bipolar Transistor (CIGBT)" ISPSD 2004, pp. 269-272
7. K. Vershinin, M. Sweet, L. Ngwendson, Jim Thomson, P. Waind, J. Bruce and E. M. Sankara Narayanan: "Experimental Demonstration of a 1.2kV Trench Clustered Insulated Gate Bipolar Transistor in Non-Punch-Through Technology", ISPSD 2006
8. M. M. De Souza, J. V. Subhas Chandra Bose, E. M. S Narayanan, T.J. Pease, G. Ensell and J. Humphreys : "A novel area efficient floating field limiting edge termination technique", Solid State Electronics, 2000, Vol. 44, No. 8, pp. 1381-1386