MOS control device concepts for AC-AC matrix converter applications: The HCD concept for high-efficiency anode-gated devices

IEEE Transactions on Electron Devices

Volumn 52, Issue 9, 2005, Pages 2075-2080

  Luther King, Ngwendson ^a   Sweet, Mark ^a   Spulber, Oana ^a   Vershinin, Konstantin V ^a   De Souza, M M ^a   Narayanan, E M Sankara ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

Anode gated (AG); Bi directional; Insulated gate bipolar transistor (IGBT); MOS; Power semiconductor device; Reverse blocking and ac ac power convention; Thyristor

Indexed keywords

ANODES; COMPUTER SIMULATION; INSULATED GATE BIPOLAR TRANSISTORS; POWER CONVERTERS; SEMICONDUCTOR JUNCTIONS; THYRISTORS;

ANODE-GATED DEVICES; BIDIRECTIONAL SWITCHES; POWER SEMICONDUCTOR DEVICE; REVERSE BLOCKING DEVICE;

MOS DEVICES;

EID: 26244437482     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.854266     Document Type: Article

References (13)

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