Series connection of 3.3kV IGBTs with active voltage balancing

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 2004, Pages 893-898

  Piazzesi, A ^a   Meysenc, L ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; ELECTRIC LOSSES; ELECTRIC POTENTIAL; MICROPROCESSOR CHIPS; OVERCURRENT PROTECTION; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SHORT CIRCUIT CURRENTS; VOLTAGE CONTROL;

ACTIVE CLAMPING CIRCUITS; DE-SATURATION CURRENTS; DYNAMIC VOLTAGE BALANCING;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 8744268293     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. D. Zhou And D. H. Braun, Rockwell Automation Mequon WI, A Practical Series Connection Technique for Multiple IGBT Devices, PESC 2001, 17-21 June 2001, Vol 4, pp. 2151-2155
2. J. Saiz, M. Mermet, D. Frey, P.O. Jeannin, J.L. Schanen, Optimization and Integration of an Active Clamping Circuit for IGBT Series Associacion, IAS 2001
3. S. Hong, V. Chitta And D. A. Torrey, member IEEE, Series Connection of IGBT's with Active Voltage Balancing, IEEE Transaction on Industry Applications, Vol. 35, No. 4, July-August 1999.
4. S. Bernet, A. Zuckerberger And P. K. Steimer, Members IEEE And R. Teichmann, Student Member IEEE, Comparison of High-Power IGBT's and Hard Driven GTO's for High-Power Inverter, IEEE Transaction on Industry Applications, Vol. 35, No. 2, March/April 1999.
5. Y. Lausenaz, D. Chatroux, J-F. Villard, CEA VALRHO, Pierrelatte, FR And J-M. Li, D. Lafore, CEGEMA/ESIM, Marseille, FR, And L. Gamier, Centralp Enertonic, St. Quentin Fallavier, FR, Serial Connected Active Voltage Clamping, EPE'99 Lausanne, CH. pp. 1-6.
6. T. Reimann, R. Krümmer, Technical University of Ilmenau, Germany And J. Petzoldt, University of Rostock, Germany, Active Voltage Clamping Techniques For Overvoltage Protection of Mas-controlled Power Ttransistors, EPE '97, Trodheim, NO, pp. 4.043-4.048.
7. Toshiba Corporation, Avalanche Withstand Capability, Product Guide, http://www.semicon.toshiba.co.jp/eng/prd/tr/doc/pdf/3547c.pdf
8. K. Dierberger Advanced Power technologiy Inc, Bend, Oregon USA, Understanding the Difference Between Standard Mosfets and Avalanche Energy Rated Mosfets, Application Note (presented at PCIM '94 Dallas), APT9402, http://www.advancedpower.com/TechSupport/ApplicationNotes/