Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBT's

IEEE Electron Device Letters

Volumn 21, Issue 3, 2000, Pages 119-122

  Shen, Z John ^a   Briggs, Dave ^b   Robb, Stephen P ^b  

^a UNIVERSITY OF MICHIGAN DEARBORN   (United States)

^b ON SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SWITCHING NETWORKS; TEMPERATURE;

INSULATED GATE BIPOLAR TRANSISTORS; POWER SEMICONDUCTORS; SELF CLAMPED INDUCTIVE SWITCHING; TWO DIMENSIONAL ELECTROTHERMAL DEVICE SIMULATIONS;

BIPOLAR TRANSISTORS;

EID: 0033906964     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.823575     Document Type: Article

References (4)

1. Phipps,S. Robb, S. Sulor, and L. Terry, "Semiconductor device having high energy sustaining capability and a temperature compensation sustaining voltage," U.S. Patent 5536958.
2. L. Mamileti, A. Taomoto, J. Shen, and S. Robb, "IGBT's designed for automotive ignition systems," in Proc. IEEE 27th Annu. Power Electronics Specialists Conf., 1996.
3. J. Yedinak et al., "Operation of an IGBT in a self-clamped inductive switching circuit (SCIS) for automotive ignition." in Proc. 10th Int. Symp. Power Semiconductor Devices and IC's (ISPSD), Kyoto, Japan, 1998, pp. 399-402.
4. MEDICI User Manual, Technol. Modeling Assoc., San Jose, CA. 1996.