Experimental demonstration of a 1.2kV trench clustered insulated gate bipolar transistor in non punch through technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn 2006, Issue , 2006, Pages

  Vershinin, K ^a   Sweet, M ^a   Ngwendson, L ^a   Thomson, Jim ^b   Waind, P ^b   Bruce, J ^c   Sankara Narayanan, E M ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b DYNEX SEMICONDUCTOR LTD   (United Kingdom)

^c Semefab Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DUMMY CELLS; NON PUNCH THROUGH TECHNOLOGY;

ELECTRIC POTENTIAL; ENERGY DISSIPATION; VOLTAGE CONTROL;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 34247499543     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. th IWPSD, 1999, pp. 1307-1312.
2. K. Vershinin, M. Sweet, O. Spulber, S. Hardikar, N. Luther-King, M. M. De Souza, S. Sverdloff and E. M. S. Narayanan, "Influence of the design parameters on the performance of 1.7 kV, NPT, planar Clustered Insulated Gate Bipolar Transistor (CIGBT)", ISPSD'04, pp. 269-272, 2004.
3. O. Spulber, M. Sweet, K. Vershinin, N. Luther-King, E. M. Sankara-Narayanan, M. M. De Souza, D. Flores, J. Millan, "1.7kV NPT V-groove clustered IGBT: fabrication and experimental demonstration", ISPSD'03, pp. 345-348.
4. O. Spulber, M. Sweet, K. Vershinin, C. K. Ngw, L. Ngwendson, J. V. S. C. Bose, M. M. De Souza, E. M. Sanakara Narayanan, "A novel trench clustered insulated gate bipolar transistor (TCIGBT)", IEEE-Electron Device Letters, Vol. 21, Issue 12, pp. 613-615, 2000