High turn-off current capability of parallel-connected 4.5 kV trench IEGT

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1392-1397

  Ogura, Tsuneo ^a   Sugiyama, Koichi ^a   Ninomiya, Hideaki ^a   Inoue, Tomoki ^a   Hasegawa, Shigeru ^a   Matsuda, Hideo ^a   Ohashi, Hiromichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Insulated gate bipolar transistors; Power semiconductor devices; Semiconductor device breakdown

Indexed keywords

ELECTRIC CURRENTS; INDUCTANCE; INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTOR SWITCHES; THYRISTORS;

GATE CIRCUIT; POWER SWITCHING DEVICE; SEMICONDUCTOR DEVICE BREAKDOWN;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0042172925     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813465     Document Type: Article

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