Silicon MIS diodes with Cr 2 O 3 nanofilm: Optical, morphological/structural and electronic transport properties

Applied Surface Science

Volumn 256, Issue 13, 2010, Pages 4185-4191

  Erdoǧan, Ibrahim Y ^a   Güllü, Ö ^b  

^a BINGOL UNIVERSITY   (Turkey)

^b BATMAN UNIVERSITY   (Turkey)

Author keywords

Band gap; Metal oxides; MIS diode; Nanofilms; Schottky barrier

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIODES; ELECTRONIC PROPERTIES; ENERGY GAP; INTERFACE STATES; PARTICLE SIZE; PHOTOLUMINESCENCE SPECTROSCOPY; SCHOTTKY BARRIER DIODES; SILICON; SILICON COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION;

ELECTRONIC TRANSPORT PROPERTIES; HEXAGONAL NANOPARTICLES; INTERFACE STATE DENSITY; METAL OXIDES; MIS DIODES; NANO FILMS; SCHOTTKY BARRIERS; STRUCTURAL CHARACTERIZATION;

CHROMIUM COMPOUNDS;

EID: 77950516107     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.01.122     Document Type: Article

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