The current-voltage and capacitance-voltage characteristics of Cu/rhodamine 101/p-Si contacts

Physica B: Condensed Matter

Volumn 348, Issue 1-4, 2004, Pages 454-458

  Temirci, Cabir ^a   Çakar, Muzaffer ^b  

^a YUZUNCU YIL UNIVERSITY   (Turkey)

^b KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

Author keywords

Diodes; Organic compound; Rectifying behavior; Rhodamine 101; Schottky barrier

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; MOLECULAR STRUCTURE; RHODIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; THERMIONIC EMISSION; VACUUM;

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; METAL-SEMICONDUCTOR (MS) CONTACTS; RECTIFYING BEHAVIOR; RHODAMINE 101;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 1942421155     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.01.149     Document Type: Article

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